Fabrication And Characterization Of Gan Grown On Cubic Si (100) And Gaas (001) Substrates
Secara umumnya tesis ini membentangkan kajian lapisan GaN yang ditumbuh di atas substrat Si (100). Pada bahagian pertama tesis ini, sifat-sifat lapisan GaN di atas substrat kubik Si telah dibincangkan. Penambahbaikan ke atas sifat-sifat lapisan GaN telah dikesan melalui kaedah penyepuhlindapan....
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| Main Author: | |
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| Format: | Thesis |
| Language: | English |
| Published: |
2015
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| Subjects: | |
| Online Access: | http://eprints.usm.my/31387/1/FABRICATION_AND_CHARACTERIZATION_OF_GaN_GROWN_ON_CUBIC_Si_%28100%29_AND_GaAs_%28001%29_SUBSTRATES.pdf |
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| Summary: | Secara umumnya tesis ini membentangkan kajian lapisan GaN yang ditumbuh
di atas substrat Si (100). Pada bahagian pertama tesis ini, sifat-sifat lapisan GaN di atas
substrat kubik Si telah dibincangkan. Penambahbaikan ke atas sifat-sifat lapisan GaN
telah dikesan melalui kaedah penyepuhlindapan.
In general, this thesis presents the study of GaN layer grown on different cubic
substrates. In the first part of this work, the properties of GaN film grown on (100)-
oriented cubic Si substrate was investigated. Improvement in the properties of the GaN
layer are observed by means of thermal annealing treatment. |
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