Fabrication And Characterization Of Gan Grown On Cubic Si (100) And Gaas (001) Substrates

Secara umumnya tesis ini membentangkan kajian lapisan GaN yang ditumbuh di atas substrat Si (100). Pada bahagian pertama tesis ini, sifat-sifat lapisan GaN di atas substrat kubik Si telah dibincangkan. Penambahbaikan ke atas sifat-sifat lapisan GaN telah dikesan melalui kaedah penyepuhlindapan....

Full description

Saved in:

Bibliographic Details
Main Author:	Mohmad Zaini, Siti Nurul Waheeda
Format:	Thesis
Language:	English
Published:	2015
Subjects:	QC1 Physics (General)
Online Access:	http://eprints.usm.my/31387/1/FABRICATION_AND_CHARACTERIZATION_OF_GaN_GROWN_ON_CUBIC_Si_%28100%29_AND_GaAs_%28001%29_SUBSTRATES.pdf
Tags:	Add Tag No Tags, Be the first to tag this record!

id	my-usm-ep.31387
record_format	uketd_dc
spelling	my-usm-ep.313872019-04-12T05:25:40Z Fabrication And Characterization Of Gan Grown On Cubic Si (100) And Gaas (001) Substrates 2015-09 Mohmad Zaini, Siti Nurul Waheeda QC1 Physics (General) Secara umumnya tesis ini membentangkan kajian lapisan GaN yang ditumbuh di atas substrat Si (100). Pada bahagian pertama tesis ini, sifat-sifat lapisan GaN di atas substrat kubik Si telah dibincangkan. Penambahbaikan ke atas sifat-sifat lapisan GaN telah dikesan melalui kaedah penyepuhlindapan. In general, this thesis presents the study of GaN layer grown on different cubic substrates. In the first part of this work, the properties of GaN film grown on (100)- oriented cubic Si substrate was investigated. Improvement in the properties of the GaN layer are observed by means of thermal annealing treatment. 2015-09 Thesis http://eprints.usm.my/31387/ http://eprints.usm.my/31387/1/FABRICATION_AND_CHARACTERIZATION_OF_GaN_GROWN_ON_CUBIC_Si_%28100%29_AND_GaAs_%28001%29_SUBSTRATES.pdf application/pdf en public masters Universiti Sains Malaysia Pusat Pengajian Sains Fizik
institution	Universiti Sains Malaysia
collection	USM Institutional Repository
language	English
topic	QC1 Physics (General)
spellingShingle	QC1 Physics (General) Mohmad Zaini, Siti Nurul Waheeda Fabrication And Characterization Of Gan Grown On Cubic Si (100) And Gaas (001) Substrates
description	Secara umumnya tesis ini membentangkan kajian lapisan GaN yang ditumbuh di atas substrat Si (100). Pada bahagian pertama tesis ini, sifat-sifat lapisan GaN di atas substrat kubik Si telah dibincangkan. Penambahbaikan ke atas sifat-sifat lapisan GaN telah dikesan melalui kaedah penyepuhlindapan. In general, this thesis presents the study of GaN layer grown on different cubic substrates. In the first part of this work, the properties of GaN film grown on (100)- oriented cubic Si substrate was investigated. Improvement in the properties of the GaN layer are observed by means of thermal annealing treatment.
format	Thesis
qualification_level	Master's degree
author	Mohmad Zaini, Siti Nurul Waheeda
author_facet	Mohmad Zaini, Siti Nurul Waheeda
author_sort	Mohmad Zaini, Siti Nurul Waheeda
title	Fabrication And Characterization Of Gan Grown On Cubic Si (100) And Gaas (001) Substrates
title_short	Fabrication And Characterization Of Gan Grown On Cubic Si (100) And Gaas (001) Substrates
title_full	Fabrication And Characterization Of Gan Grown On Cubic Si (100) And Gaas (001) Substrates
title_fullStr	Fabrication And Characterization Of Gan Grown On Cubic Si (100) And Gaas (001) Substrates
title_full_unstemmed	Fabrication And Characterization Of Gan Grown On Cubic Si (100) And Gaas (001) Substrates
title_sort	fabrication and characterization of gan grown on cubic si (100) and gaas (001) substrates
granting_institution	Universiti Sains Malaysia
granting_department	Pusat Pengajian Sains Fizik
publishDate	2015
url	http://eprints.usm.my/31387/1/FABRICATION_AND_CHARACTERIZATION_OF_GaN_GROWN_ON_CUBIC_Si_%28100%29_AND_GaAs_%28001%29_SUBSTRATES.pdf
_version_	1747820414132813824

Fabrication And Characterization Of Gan Grown On Cubic Si (100) And Gaas (001) Substrates

Similar Items