Growth And Characterization Of Gallium Nitride Films On Porous Silicon Substrate
Kajian ini memfokuskan penumbuhan lapisan gallium nitrida (GaN) ke atas substrat silikon (Si) berliang melalui kaedah percikan frekuensi radio (RF sputtering) dan penyejat alur elektron (e-beam evaporator). Untuk perbandingan, lapisan penampan nitrida aluminium nitrida (AlN), lapisan penampan titani...
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| Format: | Thesis |
| Language: | English |
| Published: |
2016
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| Subjects: | |
| Online Access: | http://eprints.usm.my/31756/1/MUHAMMAD_ESMED_ALIF_BIN_SAMSUDIN_24%28NN%29.pdf |
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| Summary: | Kajian ini memfokuskan penumbuhan lapisan gallium nitrida (GaN) ke atas substrat silikon (Si) berliang melalui kaedah percikan frekuensi radio (RF sputtering) dan penyejat alur elektron (e-beam evaporator). Untuk perbandingan, lapisan penampan nitrida aluminium nitrida (AlN), lapisan penampan titanium nitrida (TiN) dan substrat Si telah digunakan untuk penumbuhan lapisan GaN. Substrat Si berliang telah disiapkan melalui kaedah punaran elektokimia dengan menggunakan parameter yang berbeza. Didapati bahawa keliangan Si ini boleh dipengaruhi oleh jenis elektolit (larutan), masa punaran dan ketumpatan arus. Hasil daripada pemerhatian, larutan dimethylformamide (DMF) dengan tempoh punaran 30 minit pada 10 mA/cm2 ketumpatan arus dapat menghasilkan struktur keliangan Si yang paling optimum. Seterusnya, lapisan GaN telah ditumbuhkan pada Si berliang, lapisan penampan nitrida dan substrat Si melalui percikan frekuensi radio dan penyejat alur elektron.
This work focuses on the growth of GaN films on porous Si/Si substrate by radio frequency (RF) sputtering and electron beam (e-beam) evaporator. As a comparison, aluminium nitride (AlN) buffer layer, titanium nitride (TiN) buffer layer and Si substrate were used to grow the GaN layer. Porous Si/Si substrate was initially prepared by electrochemical etching using different parameters. It was found that the porosity of Si could be influenced by the type of electrolyte (solution), etching time and current density. From the observations, the dimethylformamide (DMF) solution with 30 minutes etched, under 10 mA/cm2 of current density produced the optimum porous structure. Next, the GaN layers were grown on Si substrate, nitrides buffer layers/Si substrate and porous Si/Si substrate by RF sputtering and e-beam evaporator, respectively.
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