Growth And Characterization Of Gallium Nitride Films On Porous Silicon Substrate

Kajian ini memfokuskan penumbuhan lapisan gallium nitrida (GaN) ke atas substrat silikon (Si) berliang melalui kaedah percikan frekuensi radio (RF sputtering) dan penyejat alur elektron (e-beam evaporator). Untuk perbandingan, lapisan penampan nitrida aluminium nitrida (AlN), lapisan penampan titani...

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Main Author:	Samsudin, Muhammad Esmed Alif
Format:	Thesis
Language:	English
Published:	2016
Subjects:	QC1 Physics (General)
Online Access:	http://eprints.usm.my/31756/1/MUHAMMAD_ESMED_ALIF_BIN_SAMSUDIN_24%28NN%29.pdf
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spelling	my-usm-ep.317562019-04-12T05:25:24Z Growth And Characterization Of Gallium Nitride Films On Porous Silicon Substrate 2016-03 Samsudin, Muhammad Esmed Alif QC1 Physics (General) Kajian ini memfokuskan penumbuhan lapisan gallium nitrida (GaN) ke atas substrat silikon (Si) berliang melalui kaedah percikan frekuensi radio (RF sputtering) dan penyejat alur elektron (e-beam evaporator). Untuk perbandingan, lapisan penampan nitrida aluminium nitrida (AlN), lapisan penampan titanium nitrida (TiN) dan substrat Si telah digunakan untuk penumbuhan lapisan GaN. Substrat Si berliang telah disiapkan melalui kaedah punaran elektokimia dengan menggunakan parameter yang berbeza. Didapati bahawa keliangan Si ini boleh dipengaruhi oleh jenis elektolit (larutan), masa punaran dan ketumpatan arus. Hasil daripada pemerhatian, larutan dimethylformamide (DMF) dengan tempoh punaran 30 minit pada 10 mA/cm2 ketumpatan arus dapat menghasilkan struktur keliangan Si yang paling optimum. Seterusnya, lapisan GaN telah ditumbuhkan pada Si berliang, lapisan penampan nitrida dan substrat Si melalui percikan frekuensi radio dan penyejat alur elektron. This work focuses on the growth of GaN films on porous Si/Si substrate by radio frequency (RF) sputtering and electron beam (e-beam) evaporator. As a comparison, aluminium nitride (AlN) buffer layer, titanium nitride (TiN) buffer layer and Si substrate were used to grow the GaN layer. Porous Si/Si substrate was initially prepared by electrochemical etching using different parameters. It was found that the porosity of Si could be influenced by the type of electrolyte (solution), etching time and current density. From the observations, the dimethylformamide (DMF) solution with 30 minutes etched, under 10 mA/cm2 of current density produced the optimum porous structure. Next, the GaN layers were grown on Si substrate, nitrides buffer layers/Si substrate and porous Si/Si substrate by RF sputtering and e-beam evaporator, respectively. 2016-03 Thesis http://eprints.usm.my/31756/ http://eprints.usm.my/31756/1/MUHAMMAD_ESMED_ALIF_BIN_SAMSUDIN_24%28NN%29.pdf application/pdf en public masters Universiti Sains Malaysia Pusat Pengajian Sains Fizik (School of Physics)
institution	Universiti Sains Malaysia
collection	USM Institutional Repository
language	English
topic	QC1 Physics (General)
spellingShingle	QC1 Physics (General) Samsudin, Muhammad Esmed Alif Growth And Characterization Of Gallium Nitride Films On Porous Silicon Substrate
description	Kajian ini memfokuskan penumbuhan lapisan gallium nitrida (GaN) ke atas substrat silikon (Si) berliang melalui kaedah percikan frekuensi radio (RF sputtering) dan penyejat alur elektron (e-beam evaporator). Untuk perbandingan, lapisan penampan nitrida aluminium nitrida (AlN), lapisan penampan titanium nitrida (TiN) dan substrat Si telah digunakan untuk penumbuhan lapisan GaN. Substrat Si berliang telah disiapkan melalui kaedah punaran elektokimia dengan menggunakan parameter yang berbeza. Didapati bahawa keliangan Si ini boleh dipengaruhi oleh jenis elektolit (larutan), masa punaran dan ketumpatan arus. Hasil daripada pemerhatian, larutan dimethylformamide (DMF) dengan tempoh punaran 30 minit pada 10 mA/cm2 ketumpatan arus dapat menghasilkan struktur keliangan Si yang paling optimum. Seterusnya, lapisan GaN telah ditumbuhkan pada Si berliang, lapisan penampan nitrida dan substrat Si melalui percikan frekuensi radio dan penyejat alur elektron. This work focuses on the growth of GaN films on porous Si/Si substrate by radio frequency (RF) sputtering and electron beam (e-beam) evaporator. As a comparison, aluminium nitride (AlN) buffer layer, titanium nitride (TiN) buffer layer and Si substrate were used to grow the GaN layer. Porous Si/Si substrate was initially prepared by electrochemical etching using different parameters. It was found that the porosity of Si could be influenced by the type of electrolyte (solution), etching time and current density. From the observations, the dimethylformamide (DMF) solution with 30 minutes etched, under 10 mA/cm2 of current density produced the optimum porous structure. Next, the GaN layers were grown on Si substrate, nitrides buffer layers/Si substrate and porous Si/Si substrate by RF sputtering and e-beam evaporator, respectively.
format	Thesis
qualification_level	Master's degree
author	Samsudin, Muhammad Esmed Alif
author_facet	Samsudin, Muhammad Esmed Alif
author_sort	Samsudin, Muhammad Esmed Alif
title	Growth And Characterization Of Gallium Nitride Films On Porous Silicon Substrate
title_short	Growth And Characterization Of Gallium Nitride Films On Porous Silicon Substrate
title_full	Growth And Characterization Of Gallium Nitride Films On Porous Silicon Substrate
title_fullStr	Growth And Characterization Of Gallium Nitride Films On Porous Silicon Substrate
title_full_unstemmed	Growth And Characterization Of Gallium Nitride Films On Porous Silicon Substrate
title_sort	growth and characterization of gallium nitride films on porous silicon substrate
granting_institution	Universiti Sains Malaysia
granting_department	Pusat Pengajian Sains Fizik (School of Physics)
publishDate	2016
url	http://eprints.usm.my/31756/1/MUHAMMAD_ESMED_ALIF_BIN_SAMSUDIN_24%28NN%29.pdf
_version_	1747820485345804288

Growth And Characterization Of Gallium Nitride Films On Porous Silicon Substrate

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