Growth And Characterization Of Gallium Nitride Films On Porous Silicon Substrate
Kajian ini memfokuskan penumbuhan lapisan gallium nitrida (GaN) ke atas substrat silikon (Si) berliang melalui kaedah percikan frekuensi radio (RF sputtering) dan penyejat alur elektron (e-beam evaporator). Untuk perbandingan, lapisan penampan nitrida aluminium nitrida (AlN), lapisan penampan titani...
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Format: | Thesis |
Language: | English |
Published: |
2016
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Online Access: | http://eprints.usm.my/31756/1/MUHAMMAD_ESMED_ALIF_BIN_SAMSUDIN_24%28NN%29.pdf |
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