Growth And Characterization Of Gallium Nitride Films On Porous Silicon Substrate
Kajian ini memfokuskan penumbuhan lapisan gallium nitrida (GaN) ke atas substrat silikon (Si) berliang melalui kaedah percikan frekuensi radio (RF sputtering) dan penyejat alur elektron (e-beam evaporator). Untuk perbandingan, lapisan penampan nitrida aluminium nitrida (AlN), lapisan penampan titani...
Saved in:
Main Author: | Samsudin, Muhammad Esmed Alif |
---|---|
Format: | Thesis |
Language: | English |
Published: |
2016
|
Subjects: | |
Online Access: | http://eprints.usm.my/31756/1/MUHAMMAD_ESMED_ALIF_BIN_SAMSUDIN_24%28NN%29.pdf |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Similar Items
-
Growth And Characterizations Of Spin Coated Gallium Nitride Thin Films On Siliconsubstrates
by: Fong, Chee Yong
Published: (2016) -
Morphological And Optical
Properties Of Porous Gallium Nitride
(Gan) Fabricated By
Photoelectrochemical Process
by: Cheah , Sook Fong
Published: (2015) -
Epitaxial Growth Of Iii-V Nitrides Based Light Emitting Diodes By Metal Organic Chemical Vapor Deposition
by: Samsudin, Muhammad Esmed Alif
Published: (2023) -
Structural And Optical Properties Of Sputtered Nanocrystalline Indium Nitride On Silicon Substrates
by: Amirhoseiny, Maryam
Published: (2013) -
Characterization Of Porous Silicon
And Zinc Oxide/Porous Silicon For
Photodetector Application
by: Rosli, Nurizati
Published: (2018)