Growth And Characterization Of Gallium Nitride Films On Porous Silicon Substrate

Growth And Characterization Of Gallium Nitride Films On Porous Silicon Substrate

Kajian ini memfokuskan penumbuhan lapisan gallium nitrida (GaN) ke atas substrat silikon (Si) berliang melalui kaedah percikan frekuensi radio (RF sputtering) dan penyejat alur elektron (e-beam evaporator). Untuk perbandingan, lapisan penampan nitrida aluminium nitrida (AlN), lapisan penampan titani...

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书目详细资料
主要作者:	Samsudin, Muhammad Esmed Alif
格式:	Thesis
语言:	English
出版:	2016
主题:	QC1 Physics (General)
在线阅读:	http://eprints.usm.my/31756/1/MUHAMMAD_ESMED_ALIF_BIN_SAMSUDIN_24%28NN%29.pdf
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