Growth Of Gan Films On Gaas (100) Substrate By Rf-Sputtering And E-Beam Evaporation Techniques

Growth Of Gan Films On Gaas (100) Substrate By Rf-Sputtering And E-Beam Evaporation Techniques

Kajian ini menunjukkan penumbuhan lapisan gallium nitrida (GaN) ke atas substrat gallium arsenida (GaAs) berliang melalui kaedah percikan frekuensi radio dan penyejat alur elektron. Sebagai perbandingan, penumbuhan secara terus ke atas substrat GaAs dan lapisan penampan nitrida seperti aluminum nitr...

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书目详细资料
主要作者:	Md Taib, Muhamad Ikram
格式:	Thesis
语言:	English
出版:	2016
主题:	QC1 Physics (General)
在线阅读:	http://eprints.usm.my/31850/1/MUHAMAD_IKRAM_BIN_MD_TAIB_24%28NN%29.pdf
标签:	添加标签没有标签, 成为第一个标记此记录!

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