Growth And Characterizations Of Spin Coated Gallium Nitride Thin Films On Siliconsubstrates

Galium nitrida (GaN) dengan jurang jalur langsung 3.4 eV telah menjadi tumpuan penyelidikan bahan. Ini adalah disebabkan oleh ciri-ciri dan kepentingan teknologinya untuk digunakan dalam pelbagai aplikasi seperti peranti optoelektronik dan peranti elektronik berkuasa tinggi. Pelbagai kaedah tradisio...

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Main Author:	Fong, Chee Yong
Format:	Thesis
Language:	English
Published:	2016
Subjects:	QC1 Physics (General)
Online Access:	http://eprints.usm.my/31959/1/FONG_CHEE_YONG_24%28NN%29.pdf
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id	my-usm-ep.31959
record_format	uketd_dc
spelling	my-usm-ep.319592019-04-12T05:25:22Z Growth And Characterizations Of Spin Coated Gallium Nitride Thin Films On Siliconsubstrates 2016-03 Fong, Chee Yong QC1 Physics (General) Galium nitrida (GaN) dengan jurang jalur langsung 3.4 eV telah menjadi tumpuan penyelidikan bahan. Ini adalah disebabkan oleh ciri-ciri dan kepentingan teknologinya untuk digunakan dalam pelbagai aplikasi seperti peranti optoelektronik dan peranti elektronik berkuasa tinggi. Pelbagai kaedah tradisional telah dibangunkan untuk mensintesis filem nipis GaN pada masa dahulu. Walau bagaimanapun, hanya terdapat beberapa kajian yang dilaporkan berkaitan dengan pertumbuhan filem nipis GaN dengan menggunakan kaedah salutan putaran sol-gel yang agak mudah dan lebih murah berbanding dengan kaedah yang dinyatakan sebelum ini. Oleh itu, objektif utama kajian ini adalah untuk menumbuhkan filem nipis GaN dengan kaedah salutan putaran sol-gel. Fasa awal projek ini melibatkan sintesis dan pencirian filem nipis GaN ditumbuh dengan menggunakan kaedah salutan putaran sol-gel tanpa diethanolamina (DEA). Gallium nitride (GaN) which has a direct band gap of 3.4 eV has become the focus of materials research. This is due to its unique combination of properties and technological importance for use in various applications such as optoelectronic devices and high power electronic devices. Various conventional methods have been developed to synthesize GaN thin films in the past few decades. However, there are only a few reported studies dealing with the growth of GaN thin films by using sol-gel spin coating method which is simpler and cheaper as compared to the conventional methods. Thus, the main objective of this work is to grow GaN thin films using sol-gel spin coating method. The initial phase of this work involved the synthesis and characterization of GaN thin films grown by using sol-gel spin coating method without diethanolamine (DEA). 2016-03 Thesis http://eprints.usm.my/31959/ http://eprints.usm.my/31959/1/FONG_CHEE_YONG_24%28NN%29.pdf application/pdf en public phd doctoral Universiti Sains Malaysia Pusat Pengajian Sains Fizik (School of Physics)
institution	Universiti Sains Malaysia
collection	USM Institutional Repository
language	English
topic	QC1 Physics (General)
spellingShingle	QC1 Physics (General) Fong, Chee Yong Growth And Characterizations Of Spin Coated Gallium Nitride Thin Films On Siliconsubstrates
description	Galium nitrida (GaN) dengan jurang jalur langsung 3.4 eV telah menjadi tumpuan penyelidikan bahan. Ini adalah disebabkan oleh ciri-ciri dan kepentingan teknologinya untuk digunakan dalam pelbagai aplikasi seperti peranti optoelektronik dan peranti elektronik berkuasa tinggi. Pelbagai kaedah tradisional telah dibangunkan untuk mensintesis filem nipis GaN pada masa dahulu. Walau bagaimanapun, hanya terdapat beberapa kajian yang dilaporkan berkaitan dengan pertumbuhan filem nipis GaN dengan menggunakan kaedah salutan putaran sol-gel yang agak mudah dan lebih murah berbanding dengan kaedah yang dinyatakan sebelum ini. Oleh itu, objektif utama kajian ini adalah untuk menumbuhkan filem nipis GaN dengan kaedah salutan putaran sol-gel. Fasa awal projek ini melibatkan sintesis dan pencirian filem nipis GaN ditumbuh dengan menggunakan kaedah salutan putaran sol-gel tanpa diethanolamina (DEA). Gallium nitride (GaN) which has a direct band gap of 3.4 eV has become the focus of materials research. This is due to its unique combination of properties and technological importance for use in various applications such as optoelectronic devices and high power electronic devices. Various conventional methods have been developed to synthesize GaN thin films in the past few decades. However, there are only a few reported studies dealing with the growth of GaN thin films by using sol-gel spin coating method which is simpler and cheaper as compared to the conventional methods. Thus, the main objective of this work is to grow GaN thin films using sol-gel spin coating method. The initial phase of this work involved the synthesis and characterization of GaN thin films grown by using sol-gel spin coating method without diethanolamine (DEA).
format	Thesis
qualification_name	Doctor of Philosophy (PhD.)
qualification_level	Doctorate
author	Fong, Chee Yong
author_facet	Fong, Chee Yong
author_sort	Fong, Chee Yong
title	Growth And Characterizations Of Spin Coated Gallium Nitride Thin Films On Siliconsubstrates
title_short	Growth And Characterizations Of Spin Coated Gallium Nitride Thin Films On Siliconsubstrates
title_full	Growth And Characterizations Of Spin Coated Gallium Nitride Thin Films On Siliconsubstrates
title_fullStr	Growth And Characterizations Of Spin Coated Gallium Nitride Thin Films On Siliconsubstrates
title_full_unstemmed	Growth And Characterizations Of Spin Coated Gallium Nitride Thin Films On Siliconsubstrates
title_sort	growth and characterizations of spin coated gallium nitride thin films on siliconsubstrates
granting_institution	Universiti Sains Malaysia
granting_department	Pusat Pengajian Sains Fizik (School of Physics)
publishDate	2016
url	http://eprints.usm.my/31959/1/FONG_CHEE_YONG_24%28NN%29.pdf
_version_	1747820509529112576

Growth And Characterizations Of Spin Coated Gallium Nitride Thin Films On Siliconsubstrates

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