Synthesis Of Inn, Gan And Ingan Nanoparticles By A Chemical Method At Low Temperature For Solar Cell Applications
Kajian ini mengkaji sintesis partikel nano InN, GaN, dan InGaN (NPs) dengan kaedah kimia pada suhu rendah bagi diaplikasikan dalam sel solar. Bagi menjalankan kajian ini, para pengkaji telah menggunakan beberapa konsep teori dan persamaan yang relevan. Proses yang dilaksanakan, termasuklah tindak ba...
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| Format: | Thesis |
| Language: | English |
| Published: |
2016
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| Subjects: | |
| Online Access: | http://eprints.usm.my/32220/1/MOTAHHER_ABDALLAH_HASSAN_QA%E2%80%99EED_24%28NN%29.pdf |
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| Summary: | Kajian ini mengkaji sintesis partikel nano InN, GaN, dan InGaN (NPs) dengan kaedah kimia pada suhu rendah bagi diaplikasikan dalam sel solar. Bagi menjalankan kajian ini, para pengkaji telah menggunakan beberapa konsep teori dan persamaan yang relevan. Proses yang dilaksanakan, termasuklah tindak balas bahan dalam penyejat berputar, pengacau bermagnet, pengemparan, dan proses salutan berputar untuk mendepositkan partikel nano bagi fabrikasi sel solar. Larutan Oleyamine (OAm) digunakan semasa tindakbalas sebagai bahan pelarut. HNO3 dan NH4OH digunakan sebagai sumber Nitrogen untuk mensintesis InN, GaN, dan InGaN (NPs). Dua jenis sel solar yang difabrikasi, iaitu: pertama, sel solar heterosimpang (n-InN/P-Si) dan (n-GaN/P-Si), yang menggunakan Si p (111) sebagai substrat, kedua, sel solar homosimpang (n-InGaN/p-InGaN) yang menggunakan Polyethylene terephthalate PET sebagai substrat. Sintesis InN/GaN/InGaN (NPs) dicirikan oleh Field Emission Scanning Electron Microscopy FESEM, Energy Dispersive X-ray Spectroscopy EDX, Transmission Electron Microscopy TEM, X-ray Diffraction XRD, Photo-Luminescence PL, Raman Spectroscopy, dan UV Spectroscopy, di mana sel solar yang difabrikasi dicirikan dengan menggunakan Keithely 2400 electrometer di bawah simulasi cahaya matahari pada 30 mW/cm2. Partikel nano InN, GaN, dan InGaN disintesis pada masa dan suhu yang berbeza, dan keputusan terbaik diperoleh pada (12jam) di mana suhu 90°C merupakan faktor utama dalam sintesis ini.
This study examined the synthesis of InN, GaN, InGaN nanoparticles (NPs) by a chemical method at low temperature in order to use in solar cell applications. To carry out this, the researcher has employed a number of relevant theoretical concepts and equations. The processes, which were performed, included the materials reaction in the rotary evaporator, stirrer magnetism, centrifugation, and spin coating process to deposit the nanoparticles for fabricating solar cells. Oleylamine (OAm) solution was used during the reaction and it played the role as a solvent. HNO3 and NH4OH were used as a Nitrogen source to synthesize InN, GaN, InGaN (NPs).The fabricated solar cell including two types of solar cells: the first type is hetero-junction solar cell (n-InN/P-Si) and (n-GaN/P-Si) which use Si p-(111) as a substrate, the second type is homo-junction solar cells (n-InGaN/p-InGaN) where Polyethylene terephthalate PET used as substrate. The synthesis of InN/GaN/InGaN (NPs) materials was measured and characterized by Field Emission Scanning Electron Microscopy FESEM, Energy Dispersive X-ray Spectroscopy EDX, Transmission Electron Microscopy TEM, X-ray Diffraction XRD, Photo-Luminescence PL, Raman Spectroscopy, UV- spectroscopy, where the fabricated solar cell characterized by using Keithely 2400 electrometer under simulated sun light at 30 mW/cm2..InN, GaN, and InGaN NPs were synthesized under different times and temperatures, and the best results were found at (12h) where the 90°C was the important key factor in this synthesis.
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