Design And Optimization Of Multi-Quantum Wells For GaAs Based Vertical Cavity Surface Emitting Lasers

Simulasi peranti bagi ciri-ciri elektrik dan optik laser pancaran permukaan rongga tegak (VCSEL) berasaskan GaAs telah diselidiki. Dalam laser sedemikian, kebocoran arus dan pemisahan lateral arus adalah beberapa masalah utama dalam rekabentuk VCSEL. Jadi dalam kajian ini, rekabentuk struktur VCS...

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Main Author:	Jasim, Farah Z.
Format:	Thesis
Language:	English
Published:	2011
Subjects:	QC1 Physics (General)
Online Access:	http://eprints.usm.my/32380/1/FARAH_Z._JASIM_24%28NN%29.pdf
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spelling	my-usm-ep.323802019-04-12T05:26:40Z Design And Optimization Of Multi-Quantum Wells For GaAs Based Vertical Cavity Surface Emitting Lasers 2011-01 Jasim, Farah Z. QC1 Physics (General) Simulasi peranti bagi ciri-ciri elektrik dan optik laser pancaran permukaan rongga tegak (VCSEL) berasaskan GaAs telah diselidiki. Dalam laser sedemikian, kebocoran arus dan pemisahan lateral arus adalah beberapa masalah utama dalam rekabentuk VCSEL. Jadi dalam kajian ini, rekabentuk struktur VCSEL te1masuk struktur kawasan aktif telaga kuantum berbilang (MQWs) diperihalkan dan diselidiki dengan simulasi peranti Integrated System Engineering Technology Computer Aided Design (ISETCAD). Parameter struktur VCSEL divariasikan dan dioptimumkan untuk prestasi tinggi. Kajian pengoptimuman ini melibatkan aspek seperti bilangan pasangan pemantul teragih Bragg (DBRs), ketebalan telaga kuantum, jumlah telaga, pendopan kecekapan pasangan DBR, ciri haba dan beberapa pendekatan untuk meningkatkan dan mencapai kecekapan tinggi, arus ambang yang rendah dan kuasa output yang tinggi. Device simulations for the electrical and optical characteristics of GaAs based vertical cavity surface emitting lasers (VCSELs) have been investigated. In such lasers, carrier's leakage and lateral current separation are some of the major problems in VCSEL design. Thus, in this work the design of VCSEL structures including multi quantum wells (MQWs) active region are described and investigated by Integrated System Engineering Technology Computer Aided Design (ISETCAD) device simulator. The parameters of VCSEL structures are varied and optimized for high performance. This optimization study involves aspects such as the number of distributed Bragg reflectors (DBRs) pairs, thickness of quantum wells, wells number, doping of the DBR pairs, thermal characteristics and several approaches to improve and achieve high efficiency, low threshold current and high output power. 2011-01 Thesis http://eprints.usm.my/32380/ http://eprints.usm.my/32380/1/FARAH_Z._JASIM_24%28NN%29.pdf application/pdf en public phd doctoral Universiti Sains Malaysia Pusat Pengajian Sains Fizik (School of Physics)
institution	Universiti Sains Malaysia
collection	USM Institutional Repository
language	English
topic	QC1 Physics (General)
spellingShingle	QC1 Physics (General) Jasim, Farah Z. Design And Optimization Of Multi-Quantum Wells For GaAs Based Vertical Cavity Surface Emitting Lasers
description	Simulasi peranti bagi ciri-ciri elektrik dan optik laser pancaran permukaan rongga tegak (VCSEL) berasaskan GaAs telah diselidiki. Dalam laser sedemikian, kebocoran arus dan pemisahan lateral arus adalah beberapa masalah utama dalam rekabentuk VCSEL. Jadi dalam kajian ini, rekabentuk struktur VCSEL te1masuk struktur kawasan aktif telaga kuantum berbilang (MQWs) diperihalkan dan diselidiki dengan simulasi peranti Integrated System Engineering Technology Computer Aided Design (ISETCAD). Parameter struktur VCSEL divariasikan dan dioptimumkan untuk prestasi tinggi. Kajian pengoptimuman ini melibatkan aspek seperti bilangan pasangan pemantul teragih Bragg (DBRs), ketebalan telaga kuantum, jumlah telaga, pendopan kecekapan pasangan DBR, ciri haba dan beberapa pendekatan untuk meningkatkan dan mencapai kecekapan tinggi, arus ambang yang rendah dan kuasa output yang tinggi. Device simulations for the electrical and optical characteristics of GaAs based vertical cavity surface emitting lasers (VCSELs) have been investigated. In such lasers, carrier's leakage and lateral current separation are some of the major problems in VCSEL design. Thus, in this work the design of VCSEL structures including multi quantum wells (MQWs) active region are described and investigated by Integrated System Engineering Technology Computer Aided Design (ISETCAD) device simulator. The parameters of VCSEL structures are varied and optimized for high performance. This optimization study involves aspects such as the number of distributed Bragg reflectors (DBRs) pairs, thickness of quantum wells, wells number, doping of the DBR pairs, thermal characteristics and several approaches to improve and achieve high efficiency, low threshold current and high output power.
format	Thesis
qualification_name	Doctor of Philosophy (PhD.)
qualification_level	Doctorate
author	Jasim, Farah Z.
author_facet	Jasim, Farah Z.
author_sort	Jasim, Farah Z.
title	Design And Optimization Of Multi-Quantum Wells For GaAs Based Vertical Cavity Surface Emitting Lasers
title_short	Design And Optimization Of Multi-Quantum Wells For GaAs Based Vertical Cavity Surface Emitting Lasers
title_full	Design And Optimization Of Multi-Quantum Wells For GaAs Based Vertical Cavity Surface Emitting Lasers
title_fullStr	Design And Optimization Of Multi-Quantum Wells For GaAs Based Vertical Cavity Surface Emitting Lasers
title_full_unstemmed	Design And Optimization Of Multi-Quantum Wells For GaAs Based Vertical Cavity Surface Emitting Lasers
title_sort	design and optimization of multi-quantum wells for gaas based vertical cavity surface emitting lasers
granting_institution	Universiti Sains Malaysia
granting_department	Pusat Pengajian Sains Fizik (School of Physics)
publishDate	2011
url	http://eprints.usm.my/32380/1/FARAH_Z._JASIM_24%28NN%29.pdf
_version_	1747820570915897344

Design And Optimization Of Multi-Quantum Wells For GaAs Based Vertical Cavity Surface Emitting Lasers

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