Particle Removal In Post Chemical-Mechanical Planarization (Cmp) Cleaning Process: Experimental And Modeling Studies
Proses pencucian pasca perataan secara mekanikal-kimia memainkan peranan penting dalam teknologi wafer kerana ia adalah salah satu objektif untuk menghasilkan permukaan yang berkualiti tinggi bagi dimensi yang halus. Kajian ini terdiri daripada eksperimen dan teori untuk menilai kecekapan penying...
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| Format: | Thesis |
| Language: | English |
| Published: |
2009
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| Subjects: | |
| Online Access: | http://eprints.usm.my/41279/1/Lok_Yian_Han24.pdf |
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| Summary: | Proses pencucian pasca perataan secara mekanikal-kimia memainkan peranan
penting dalam teknologi wafer kerana ia adalah salah satu objektif untuk
menghasilkan permukaan yang berkualiti tinggi bagi dimensi yang halus. Kajian ini
terdiri daripada eksperimen dan teori untuk menilai kecekapan penyingkiran zarah
silikon dioksida (SiO2) daripada permukaan wafer silikon semasa proses pencucian
pasca perataan secara mekanikal-kimia (CMP). Kapasiti penyingkiran zarah daripada
permukaan wafer melalui cakera pencucian dikaji menggunakan air dinyah ion dan
asid sitrik dengan kadar pengaliran (dari 200 ml/min hingga 400 ml/min), tekanan
cakera pencucian(1psi, 2psi dan 3psi), dan kelajuan cakera pencucian (0rpm, 1rpm
and 2rpm) yang berbeza. Kecekapan penyingkiran zarah dalam setiap kes dikaji
menggunakan jumlah zarah yang diukur melalui mesin pembiasan laser (SP1 KLA
Tencor). Kecekapan penyingkiran zarah didapati meningkat dengan peningkatan
kadar pengaliran, tekanan cakera pencucian dan kelajuan cakera pencucian.
The post chemical mechanical planarization (CMP) cleaning became very
important in wafer technology as one of its objectives was to manufacture high
quality surfaces of fine dimensions. This study comprises of an experimental as well
as a theoretical study on particle removal efficiency mainly silicon dioxide (SiO2)
particles from wafer surface after chemical mechanical planarization (CMP) cleaning.
The particle removal capacity from wafer surface in buffing (cleaning) disk was
studied using de-ionized water and citric acid at different flow rates (200 ml/min to
400 ml/min) buffing disc pressure (1psi, 2psi and 3psi) and relative buffing disc
speeds setting (0rpm, 1rpm and 2rpm). The removal efficiency in each case was
evaluated using a particle count based on measurements with a laser scattering
equipment (SP1 KLA Tenor). Particle removal efficiency was found to be increased
with flow rates, buffing disc pressure and buffing disc speeds. |
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