A1GaN Thin Films On Silicon Substrates For Photodetector And Transistor Devices

This study examined AlxGa1-xN alloys grown on Si substrate for UVphotodetectors and transistors applications. Radio-frequency (RF) nitrogen plasmaassisted molecular beam epitaxy (PA-MBE) technique was used to grow AlxGaxN/GaN/AlN thin films on the Si(111) substrates. Undoped and n-type Si-doped samp...

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Main Author:	Hussein, Asaad Shakir
Format:	Thesis
Language:	English
Published:	2011
Subjects:	QC1 Physics (General)
Online Access:	http://eprints.usm.my/41621/1/ASAAD_SHAKIR_HUSSEIN.pdf
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spelling	my-usm-ep.416212019-04-12T05:26:32Z A1GaN Thin Films On Silicon Substrates For Photodetector And Transistor Devices 2011-07 Hussein, Asaad Shakir QC1 Physics (General) This study examined AlxGa1-xN alloys grown on Si substrate for UVphotodetectors and transistors applications. Radio-frequency (RF) nitrogen plasmaassisted molecular beam epitaxy (PA-MBE) technique was used to grow AlxGaxN/GaN/AlN thin films on the Si(111) substrates. Undoped and n-type Si-doped samples of AlxGa1-xN with different Al-mole fractions were successfully grown. Reflection high energy electron diffraction (RHEED), scanning electron microscopy (SEM), transmission electron microscopy (TEM), atomic force microscopy (AFM), high-resolution X-ray diffraction (HR-XRD), photoluminescence (PL), 2011-07 Thesis http://eprints.usm.my/41621/ http://eprints.usm.my/41621/1/ASAAD_SHAKIR_HUSSEIN.pdf application/pdf en public phd doctoral Universiti Sains Malaysia Pusat Pengajian Sains Fizik
institution	Universiti Sains Malaysia
collection	USM Institutional Repository
language	English
topic	QC1 Physics (General)
spellingShingle	QC1 Physics (General) Hussein, Asaad Shakir A1GaN Thin Films On Silicon Substrates For Photodetector And Transistor Devices
description	This study examined AlxGa1-xN alloys grown on Si substrate for UVphotodetectors and transistors applications. Radio-frequency (RF) nitrogen plasmaassisted molecular beam epitaxy (PA-MBE) technique was used to grow AlxGaxN/GaN/AlN thin films on the Si(111) substrates. Undoped and n-type Si-doped samples of AlxGa1-xN with different Al-mole fractions were successfully grown. Reflection high energy electron diffraction (RHEED), scanning electron microscopy (SEM), transmission electron microscopy (TEM), atomic force microscopy (AFM), high-resolution X-ray diffraction (HR-XRD), photoluminescence (PL),
format	Thesis
qualification_name	Doctor of Philosophy (PhD.)
qualification_level	Doctorate
author	Hussein, Asaad Shakir
author_facet	Hussein, Asaad Shakir
author_sort	Hussein, Asaad Shakir
title	A1GaN Thin Films On Silicon Substrates For Photodetector And Transistor Devices
title_short	A1GaN Thin Films On Silicon Substrates For Photodetector And Transistor Devices
title_full	A1GaN Thin Films On Silicon Substrates For Photodetector And Transistor Devices
title_fullStr	A1GaN Thin Films On Silicon Substrates For Photodetector And Transistor Devices
title_full_unstemmed	A1GaN Thin Films On Silicon Substrates For Photodetector And Transistor Devices
title_sort	a1gan thin films on silicon substrates for photodetector and transistor devices
granting_institution	Universiti Sains Malaysia
granting_department	Pusat Pengajian Sains Fizik
publishDate	2011
url	http://eprints.usm.my/41621/1/ASAAD_SHAKIR_HUSSEIN.pdf
_version_	1747820942187298816

A1GaN Thin Films On Silicon Substrates For Photodetector And Transistor Devices

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