A1GaN Thin Films On Silicon Substrates For Photodetector And Transistor Devices
This study examined AlxGa1-xN alloys grown on Si substrate for UVphotodetectors and transistors applications. Radio-frequency (RF) nitrogen plasmaassisted molecular beam epitaxy (PA-MBE) technique was used to grow AlxGaxN/GaN/AlN thin films on the Si(111) substrates. Undoped and n-type Si-doped samp...
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my-usm-ep.416212019-04-12T05:26:32Z A1GaN Thin Films On Silicon Substrates For Photodetector And Transistor Devices 2011-07 Hussein, Asaad Shakir QC1 Physics (General) This study examined AlxGa1-xN alloys grown on Si substrate for UVphotodetectors and transistors applications. Radio-frequency (RF) nitrogen plasmaassisted molecular beam epitaxy (PA-MBE) technique was used to grow AlxGaxN/GaN/AlN thin films on the Si(111) substrates. Undoped and n-type Si-doped samples of AlxGa1-xN with different Al-mole fractions were successfully grown. Reflection high energy electron diffraction (RHEED), scanning electron microscopy (SEM), transmission electron microscopy (TEM), atomic force microscopy (AFM), high-resolution X-ray diffraction (HR-XRD), photoluminescence (PL), 2011-07 Thesis http://eprints.usm.my/41621/ http://eprints.usm.my/41621/1/ASAAD_SHAKIR_HUSSEIN.pdf application/pdf en public phd doctoral Universiti Sains Malaysia Pusat Pengajian Sains Fizik |
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Universiti Sains Malaysia |
collection |
USM Institutional Repository |
language |
English |
topic |
QC1 Physics (General) |
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QC1 Physics (General) Hussein, Asaad Shakir A1GaN Thin Films On Silicon Substrates For Photodetector And Transistor Devices |
description |
This study examined AlxGa1-xN alloys grown on Si substrate for UVphotodetectors and transistors applications. Radio-frequency (RF) nitrogen plasmaassisted molecular beam epitaxy (PA-MBE) technique was used to grow AlxGaxN/GaN/AlN thin films on the Si(111) substrates. Undoped and n-type Si-doped samples of AlxGa1-xN with different Al-mole fractions were successfully grown.
Reflection high energy electron diffraction (RHEED), scanning electron microscopy (SEM), transmission electron microscopy (TEM), atomic force microscopy (AFM), high-resolution X-ray diffraction (HR-XRD), photoluminescence (PL), |
format |
Thesis |
qualification_name |
Doctor of Philosophy (PhD.) |
qualification_level |
Doctorate |
author |
Hussein, Asaad Shakir |
author_facet |
Hussein, Asaad Shakir |
author_sort |
Hussein, Asaad Shakir |
title |
A1GaN Thin Films On Silicon Substrates For Photodetector And Transistor Devices |
title_short |
A1GaN Thin Films On Silicon Substrates For Photodetector And Transistor Devices |
title_full |
A1GaN Thin Films On Silicon Substrates For Photodetector And Transistor Devices |
title_fullStr |
A1GaN Thin Films On Silicon Substrates For Photodetector And Transistor Devices |
title_full_unstemmed |
A1GaN Thin Films On Silicon Substrates For Photodetector And Transistor Devices |
title_sort |
a1gan thin films on silicon substrates for photodetector and transistor devices |
granting_institution |
Universiti Sains Malaysia |
granting_department |
Pusat Pengajian Sains Fizik |
publishDate |
2011 |
url |
http://eprints.usm.my/41621/1/ASAAD_SHAKIR_HUSSEIN.pdf |
_version_ |
1747820942187298816 |