Simulation And Fabrication Of Ge Islands On Si Metal-Semiconductor-Metal Photodetectors

In this thesis, experimental fabrication and theoretical simulation of Ge islands Si based metal-semiconductor-metal photodetectors have been reported. Radio frequency sputtering was used to deposit Ge thin films on silicon substrates. This is followed by rapid thermal annealing to form Ge islands....

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Main Author:	Sarmast, Hadi Mahmodi Sheikh
Format:	Thesis
Language:	English
Published:	2010
Subjects:	QC1 Physics (General)
Online Access:	http://eprints.usm.my/41822/1/HADI_MAHMODI_SHEIKH_SARMAST.pdf
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id	my-usm-ep.41822
record_format	uketd_dc
spelling	my-usm-ep.418222019-04-12T05:26:46Z Simulation And Fabrication Of Ge Islands On Si Metal-Semiconductor-Metal Photodetectors 2010-11 Sarmast, Hadi Mahmodi Sheikh QC1 Physics (General) In this thesis, experimental fabrication and theoretical simulation of Ge islands Si based metal-semiconductor-metal photodetectors have been reported. Radio frequency sputtering was used to deposit Ge thin films on silicon substrates. This is followed by rapid thermal annealing to form Ge islands. Not only that the annealing produces Ge islands but also wetting layer. The size and density of the islands are greatly influenced by the annealing time. 2010-11 Thesis http://eprints.usm.my/41822/ http://eprints.usm.my/41822/1/HADI_MAHMODI_SHEIKH_SARMAST.pdf application/pdf en public masters Universiti Sains Malaysia Pusat Pengajian Sains Fizik
institution	Universiti Sains Malaysia
collection	USM Institutional Repository
language	English
topic	QC1 Physics (General)
spellingShingle	QC1 Physics (General) Sarmast, Hadi Mahmodi Sheikh Simulation And Fabrication Of Ge Islands On Si Metal-Semiconductor-Metal Photodetectors
description	In this thesis, experimental fabrication and theoretical simulation of Ge islands Si based metal-semiconductor-metal photodetectors have been reported. Radio frequency sputtering was used to deposit Ge thin films on silicon substrates. This is followed by rapid thermal annealing to form Ge islands. Not only that the annealing produces Ge islands but also wetting layer. The size and density of the islands are greatly influenced by the annealing time.
format	Thesis
qualification_level	Master's degree
author	Sarmast, Hadi Mahmodi Sheikh
author_facet	Sarmast, Hadi Mahmodi Sheikh
author_sort	Sarmast, Hadi Mahmodi Sheikh
title	Simulation And Fabrication Of Ge Islands On Si Metal-Semiconductor-Metal Photodetectors
title_short	Simulation And Fabrication Of Ge Islands On Si Metal-Semiconductor-Metal Photodetectors
title_full	Simulation And Fabrication Of Ge Islands On Si Metal-Semiconductor-Metal Photodetectors
title_fullStr	Simulation And Fabrication Of Ge Islands On Si Metal-Semiconductor-Metal Photodetectors
title_full_unstemmed	Simulation And Fabrication Of Ge Islands On Si Metal-Semiconductor-Metal Photodetectors
title_sort	simulation and fabrication of ge islands on si metal-semiconductor-metal photodetectors
granting_institution	Universiti Sains Malaysia
granting_department	Pusat Pengajian Sains Fizik
publishDate	2010
url	http://eprints.usm.my/41822/1/HADI_MAHMODI_SHEIKH_SARMAST.pdf
_version_	1747820977345003520

Simulation And Fabrication Of Ge Islands On Si Metal-Semiconductor-Metal Photodetectors

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