Synthesis Of Gallium Nitride (GaN) Nanostructures By Electrochemical Techniques For Sensing Applications

The main goal of this work presented in this thesis was to fabricate nanostructures of GaN using two low-cost electrochemical techniques namely photoelectrochemical etching (PECE) and electrochemical deposition (ECD). In the first category of this work, the porous GaN was generated using photoelectr...

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Main Author:	Al-Heuseen, Khalled Mhammad Kallef
Format:	Thesis
Language:	English
Published:	2011
Subjects:	QC1 Physics (General)
Online Access:	http://eprints.usm.my/41902/1/KHALLED_MHAMMAD_KALLEF_AL-HEUSEEN.pdf
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id	my-usm-ep.41902
record_format	uketd_dc
spelling	my-usm-ep.419022019-04-12T05:26:35Z Synthesis Of Gallium Nitride (GaN) Nanostructures By Electrochemical Techniques For Sensing Applications 2011-05 Al-Heuseen, Khalled Mhammad Kallef QC1 Physics (General) The main goal of this work presented in this thesis was to fabricate nanostructures of GaN using two low-cost electrochemical techniques namely photoelectrochemical etching (PECE) and electrochemical deposition (ECD). In the first category of this work, the porous GaN was generated using photoelectrochemical etching techniques under different conditions, i.e. current density, different duration of etching and different electrolytes. The results showed that the average pore size was sensitive to the current density, and different electrolytes generated different morphology. 2011-05 Thesis http://eprints.usm.my/41902/ http://eprints.usm.my/41902/1/KHALLED_MHAMMAD_KALLEF_AL-HEUSEEN.pdf application/pdf en public phd doctoral Universiti Sains Malaysia Pusat Pengajian Sains Fizik
institution	Universiti Sains Malaysia
collection	USM Institutional Repository
language	English
topic	QC1 Physics (General)
spellingShingle	QC1 Physics (General) Al-Heuseen, Khalled Mhammad Kallef Synthesis Of Gallium Nitride (GaN) Nanostructures By Electrochemical Techniques For Sensing Applications
description	The main goal of this work presented in this thesis was to fabricate nanostructures of GaN using two low-cost electrochemical techniques namely photoelectrochemical etching (PECE) and electrochemical deposition (ECD). In the first category of this work, the porous GaN was generated using photoelectrochemical etching techniques under different conditions, i.e. current density, different duration of etching and different electrolytes. The results showed that the average pore size was sensitive to the current density, and different electrolytes generated different morphology.
format	Thesis
qualification_name	Doctor of Philosophy (PhD.)
qualification_level	Doctorate
author	Al-Heuseen, Khalled Mhammad Kallef
author_facet	Al-Heuseen, Khalled Mhammad Kallef
author_sort	Al-Heuseen, Khalled Mhammad Kallef
title	Synthesis Of Gallium Nitride (GaN) Nanostructures By Electrochemical Techniques For Sensing Applications
title_short	Synthesis Of Gallium Nitride (GaN) Nanostructures By Electrochemical Techniques For Sensing Applications
title_full	Synthesis Of Gallium Nitride (GaN) Nanostructures By Electrochemical Techniques For Sensing Applications
title_fullStr	Synthesis Of Gallium Nitride (GaN) Nanostructures By Electrochemical Techniques For Sensing Applications
title_full_unstemmed	Synthesis Of Gallium Nitride (GaN) Nanostructures By Electrochemical Techniques For Sensing Applications
title_sort	synthesis of gallium nitride (gan) nanostructures by electrochemical techniques for sensing applications
granting_institution	Universiti Sains Malaysia
granting_department	Pusat Pengajian Sains Fizik
publishDate	2011
url	http://eprints.usm.my/41902/1/KHALLED_MHAMMAD_KALLEF_AL-HEUSEEN.pdf
_version_	1747820992682524672

Synthesis Of Gallium Nitride (GaN) Nanostructures By Electrochemical Techniques For Sensing Applications

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