Synthesis Of Gallium Nitride (GaN) Nanostructures By Electrochemical Techniques For Sensing Applications
The main goal of this work presented in this thesis was to fabricate nanostructures of GaN using two low-cost electrochemical techniques namely photoelectrochemical etching (PECE) and electrochemical deposition (ECD). In the first category of this work, the porous GaN was generated using photoelectr...
محفوظ في:
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| التنسيق: | أطروحة |
| اللغة: | English |
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2011
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| الوصول للمادة أونلاين: | http://eprints.usm.my/41902/1/KHALLED_MHAMMAD_KALLEF_AL-HEUSEEN.pdf |
| الوسوم: |
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my-usm-ep.419022019-04-12T05:26:35Z Synthesis Of Gallium Nitride (GaN) Nanostructures By Electrochemical Techniques For Sensing Applications 2011-05 Al-Heuseen, Khalled Mhammad Kallef QC1 Physics (General) The main goal of this work presented in this thesis was to fabricate nanostructures of GaN using two low-cost electrochemical techniques namely photoelectrochemical etching (PECE) and electrochemical deposition (ECD). In the first category of this work, the porous GaN was generated using photoelectrochemical etching techniques under different conditions, i.e. current density, different duration of etching and different electrolytes. The results showed that the average pore size was sensitive to the current density, and different electrolytes generated different morphology. 2011-05 Thesis http://eprints.usm.my/41902/ http://eprints.usm.my/41902/1/KHALLED_MHAMMAD_KALLEF_AL-HEUSEEN.pdf application/pdf en public phd doctoral Universiti Sains Malaysia Pusat Pengajian Sains Fizik |
| institution |
Universiti Sains Malaysia |
| collection |
USM Institutional Repository |
| language |
English |
| topic |
QC1 Physics (General) |
| spellingShingle |
QC1 Physics (General) Al-Heuseen, Khalled Mhammad Kallef Synthesis Of Gallium Nitride (GaN) Nanostructures By Electrochemical Techniques For Sensing Applications |
| description |
The main goal of this work presented in this thesis was to fabricate nanostructures of GaN using two low-cost electrochemical techniques namely photoelectrochemical etching (PECE) and electrochemical deposition (ECD). In the first category of this work, the porous GaN was generated using photoelectrochemical etching techniques under different conditions, i.e. current density, different duration of etching and different electrolytes. The results showed that the average pore size was sensitive to the current density, and different electrolytes generated different morphology. |
| format |
Thesis |
| qualification_name |
Doctor of Philosophy (PhD.) |
| qualification_level |
Doctorate |
| author |
Al-Heuseen, Khalled Mhammad Kallef |
| author_facet |
Al-Heuseen, Khalled Mhammad Kallef |
| author_sort |
Al-Heuseen, Khalled Mhammad Kallef |
| title |
Synthesis Of Gallium Nitride (GaN) Nanostructures By Electrochemical Techniques For Sensing Applications |
| title_short |
Synthesis Of Gallium Nitride (GaN) Nanostructures By Electrochemical Techniques For Sensing Applications |
| title_full |
Synthesis Of Gallium Nitride (GaN) Nanostructures By Electrochemical Techniques For Sensing Applications |
| title_fullStr |
Synthesis Of Gallium Nitride (GaN) Nanostructures By Electrochemical Techniques For Sensing Applications |
| title_full_unstemmed |
Synthesis Of Gallium Nitride (GaN) Nanostructures By Electrochemical Techniques For Sensing Applications |
| title_sort |
synthesis of gallium nitride (gan) nanostructures by electrochemical techniques for sensing applications |
| granting_institution |
Universiti Sains Malaysia |
| granting_department |
Pusat Pengajian Sains Fizik |
| publishDate |
2011 |
| url |
http://eprints.usm.my/41902/1/KHALLED_MHAMMAD_KALLEF_AL-HEUSEEN.pdf |
| _version_ |
1747820992682524672 |