Characterization Of Ti/TiN/AlCu Film Stack Prepared By Physical Vapor Deposition

Physical vapor deposition (PVD) method is widely used in semiconductor industry in metallic film deposition process. It has been found that the metallic film properties are influenced by the parameter change in the PVD sputtering machine. Ionized physical vapor deposition (I-PVD) came about when ele...

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Main Author:	Leow, Mun Tyng
Format:	Thesis
Language:	English
Published:	2012
Subjects:	QC1 Physics (General)
Online Access:	http://eprints.usm.my/41945/1/LEOW_MUN_TYNG.pdf
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spelling	my-usm-ep.419452019-04-12T05:26:25Z Characterization Of Ti/TiN/AlCu Film Stack Prepared By Physical Vapor Deposition 2012 Leow, Mun Tyng QC1 Physics (General) Physical vapor deposition (PVD) method is widely used in semiconductor industry in metallic film deposition process. It has been found that the metallic film properties are influenced by the parameter change in the PVD sputtering machine. Ionized physical vapor deposition (I-PVD) came about when electronic devices shrink in sizes which increase the packing density of the device. This lead to higher aspect ratio of the via size and smaller interconnect lines of the integrated circuit. I-PVD sputtering method had successfully relieved the step coverage issues for high aspect ratio trenches and vias. In semiconductor industries, reliability surfaced as the major enemy. 2012 Thesis http://eprints.usm.my/41945/ http://eprints.usm.my/41945/1/LEOW_MUN_TYNG.pdf application/pdf en public masters Universiti Sains Malaysia Pusat Pengajian Sains Fizik
institution	Universiti Sains Malaysia
collection	USM Institutional Repository
language	English
topic	QC1 Physics (General)
spellingShingle	QC1 Physics (General) Leow, Mun Tyng Characterization Of Ti/TiN/AlCu Film Stack Prepared By Physical Vapor Deposition
description	Physical vapor deposition (PVD) method is widely used in semiconductor industry in metallic film deposition process. It has been found that the metallic film properties are influenced by the parameter change in the PVD sputtering machine. Ionized physical vapor deposition (I-PVD) came about when electronic devices shrink in sizes which increase the packing density of the device. This lead to higher aspect ratio of the via size and smaller interconnect lines of the integrated circuit. I-PVD sputtering method had successfully relieved the step coverage issues for high aspect ratio trenches and vias. In semiconductor industries, reliability surfaced as the major enemy.
format	Thesis
qualification_level	Master's degree
author	Leow, Mun Tyng
author_facet	Leow, Mun Tyng
author_sort	Leow, Mun Tyng
title	Characterization Of Ti/TiN/AlCu Film Stack Prepared By Physical Vapor Deposition
title_short	Characterization Of Ti/TiN/AlCu Film Stack Prepared By Physical Vapor Deposition
title_full	Characterization Of Ti/TiN/AlCu Film Stack Prepared By Physical Vapor Deposition
title_fullStr	Characterization Of Ti/TiN/AlCu Film Stack Prepared By Physical Vapor Deposition
title_full_unstemmed	Characterization Of Ti/TiN/AlCu Film Stack Prepared By Physical Vapor Deposition
title_sort	characterization of ti/tin/alcu film stack prepared by physical vapor deposition
granting_institution	Universiti Sains Malaysia
granting_department	Pusat Pengajian Sains Fizik
publishDate	2012
url	http://eprints.usm.my/41945/1/LEOW_MUN_TYNG.pdf
_version_	1747821002237149184

Characterization Of Ti/TiN/AlCu Film Stack Prepared By Physical Vapor Deposition

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