Characterization Of Ti/TiN/AlCu Film Stack Prepared By Physical Vapor Deposition
Physical vapor deposition (PVD) method is widely used in semiconductor industry in metallic film deposition process. It has been found that the metallic film properties are influenced by the parameter change in the PVD sputtering machine. Ionized physical vapor deposition (I-PVD) came about when ele...
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my-usm-ep.419452019-04-12T05:26:25Z Characterization Of Ti/TiN/AlCu Film Stack Prepared By Physical Vapor Deposition 2012 Leow, Mun Tyng QC1 Physics (General) Physical vapor deposition (PVD) method is widely used in semiconductor industry in metallic film deposition process. It has been found that the metallic film properties are influenced by the parameter change in the PVD sputtering machine. Ionized physical vapor deposition (I-PVD) came about when electronic devices shrink in sizes which increase the packing density of the device. This lead to higher aspect ratio of the via size and smaller interconnect lines of the integrated circuit. I-PVD sputtering method had successfully relieved the step coverage issues for high aspect ratio trenches and vias. In semiconductor industries, reliability surfaced as the major enemy. 2012 Thesis http://eprints.usm.my/41945/ http://eprints.usm.my/41945/1/LEOW_MUN_TYNG.pdf application/pdf en public masters Universiti Sains Malaysia Pusat Pengajian Sains Fizik |
| institution |
Universiti Sains Malaysia |
| collection |
USM Institutional Repository |
| language |
English |
| topic |
QC1 Physics (General) |
| spellingShingle |
QC1 Physics (General) Leow, Mun Tyng Characterization Of Ti/TiN/AlCu Film Stack Prepared By Physical Vapor Deposition |
| description |
Physical vapor deposition (PVD) method is widely used in semiconductor industry in metallic film deposition process. It has been found that the metallic film properties are influenced by the parameter change in the PVD sputtering machine. Ionized physical vapor deposition (I-PVD) came about when electronic devices shrink in sizes which increase the packing density of the device. This lead to higher aspect ratio of the via size and smaller interconnect lines of the integrated circuit. I-PVD sputtering method had successfully relieved the step coverage issues for high aspect ratio trenches and vias. In semiconductor industries, reliability surfaced as the major enemy. |
| format |
Thesis |
| qualification_level |
Master's degree |
| author |
Leow, Mun Tyng |
| author_facet |
Leow, Mun Tyng |
| author_sort |
Leow, Mun Tyng |
| title |
Characterization Of Ti/TiN/AlCu Film Stack Prepared By Physical Vapor Deposition |
| title_short |
Characterization Of Ti/TiN/AlCu Film Stack Prepared By Physical Vapor Deposition |
| title_full |
Characterization Of Ti/TiN/AlCu Film Stack Prepared By Physical Vapor Deposition |
| title_fullStr |
Characterization Of Ti/TiN/AlCu Film Stack Prepared By Physical Vapor Deposition |
| title_full_unstemmed |
Characterization Of Ti/TiN/AlCu Film Stack Prepared By Physical Vapor Deposition |
| title_sort |
characterization of ti/tin/alcu film stack prepared by physical vapor deposition |
| granting_institution |
Universiti Sains Malaysia |
| granting_department |
Pusat Pengajian Sains Fizik |
| publishDate |
2012 |
| url |
http://eprints.usm.my/41945/1/LEOW_MUN_TYNG.pdf |
| _version_ |
1747821002237149184 |