Simulation Of Short Channel Vertical Mosfet Structures

Recently, the end of the planar bulk complementary metal oxide semiconductor (CMOS) had become visible. Vertical metal oxide semiconductor field effect transistor (VMOST) structures are one of the promising structures for future CMOS technologies. There are still a lot of research needs to be done o...

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Main Author:	Ooi , Poh Kok
Format:	Thesis
Language:	English
Published:	2010
Subjects:	QC1 Physics (General)
Online Access:	http://eprints.usm.my/42269/1/OOI_POH_KOK.pdf
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id	my-usm-ep.42269
record_format	uketd_dc
spelling	my-usm-ep.422692019-04-12T05:26:46Z Simulation Of Short Channel Vertical Mosfet Structures 2010-12 Ooi , Poh Kok QC1 Physics (General) Recently, the end of the planar bulk complementary metal oxide semiconductor (CMOS) had become visible. Vertical metal oxide semiconductor field effect transistor (VMOST) structures are one of the promising structures for future CMOS technologies. There are still a lot of research needs to be done on the VMOST structures to mature as that of planar CMOS technologies. It is well known that there are many parameters needed to be considered in designing MOSFET. With the aid of computer-aided design, we can optimize the MOSFET parameters faster and with lower cost. 2010-12 Thesis http://eprints.usm.my/42269/ http://eprints.usm.my/42269/1/OOI_POH_KOK.pdf application/pdf en public masters Universiti Sains Malaysia Pusat Pengajian Sains Fizik
institution	Universiti Sains Malaysia
collection	USM Institutional Repository
language	English
topic	QC1 Physics (General)
spellingShingle	QC1 Physics (General) Ooi , Poh Kok Simulation Of Short Channel Vertical Mosfet Structures
description	Recently, the end of the planar bulk complementary metal oxide semiconductor (CMOS) had become visible. Vertical metal oxide semiconductor field effect transistor (VMOST) structures are one of the promising structures for future CMOS technologies. There are still a lot of research needs to be done on the VMOST structures to mature as that of planar CMOS technologies. It is well known that there are many parameters needed to be considered in designing MOSFET. With the aid of computer-aided design, we can optimize the MOSFET parameters faster and with lower cost.
format	Thesis
qualification_level	Master's degree
author	Ooi , Poh Kok
author_facet	Ooi , Poh Kok
author_sort	Ooi , Poh Kok
title	Simulation Of Short Channel Vertical Mosfet Structures
title_short	Simulation Of Short Channel Vertical Mosfet Structures
title_full	Simulation Of Short Channel Vertical Mosfet Structures
title_fullStr	Simulation Of Short Channel Vertical Mosfet Structures
title_full_unstemmed	Simulation Of Short Channel Vertical Mosfet Structures
title_sort	simulation of short channel vertical mosfet structures
granting_institution	Universiti Sains Malaysia
granting_department	Pusat Pengajian Sains Fizik
publishDate	2010
url	http://eprints.usm.my/42269/1/OOI_POH_KOK.pdf
_version_	1747821048356667392

Simulation Of Short Channel Vertical Mosfet Structures

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