Effects Of Current Density, Etching Time And Hydrofluoric Acid Concentration On The Formation And Morphology Of Highly Doped N-Type Porous Silicon
Highly doped n-type porous silicons (PS) were prepared via electrochemical etching. The effect of current density (50 – 300 mA cm-2), etching time (30 – 300 s) and HF concentration (9.2 – 49.0% (v/v)) on the morphology, pore diameter, porosity, surface roughness and electrical properties of the PS w...
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| 格式: | Thesis |
| 語言: | English |
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2011
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| 在線閱讀: | http://eprints.usm.my/42764/1/SURIANI_HAJI_YAAKOB.pdf |
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