DC And RF Characterization Of n-GaN Schottky Diode For Microwave Application
Gallium nitride is a promising wide bandgap semiconductor material for high-power, high temperature and high frequency device applications. However, there are still a number of factors that are limiting the material to reach a satisfactory device performance. Among them the most important and critic...
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| التنسيق: | أطروحة |
| اللغة: | English |
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2011
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| الوصول للمادة أونلاين: | http://eprints.usm.my/42797/1/TARIQ_MUNIR.pdf |
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my-usm-ep.427972019-04-12T05:26:40Z DC And RF Characterization Of n-GaN Schottky Diode For Microwave Application 2011-01 Munir, Tariq QC1 Physics (General) Gallium nitride is a promising wide bandgap semiconductor material for high-power, high temperature and high frequency device applications. However, there are still a number of factors that are limiting the material to reach a satisfactory device performance. Among them the most important and critical factors are the reverse leakage current, series resistance, junction capacitance and thermal stability that limits Schottky diode performance on gallium nitride for Direct Current (DC) and Radio Frequency (RF) characteristics. To overcome these limitations we studied the influence of metal contact, contact area, thermal behavior and edge termination on DC and RF characteristics of n-GaN Schottky diode by simulation and fabrication approach. 2011-01 Thesis http://eprints.usm.my/42797/ http://eprints.usm.my/42797/1/TARIQ_MUNIR.pdf application/pdf en public phd doctoral Universiti Sains Malaysia Pusat Pengajian Sains Fizik |
| institution |
Universiti Sains Malaysia |
| collection |
USM Institutional Repository |
| language |
English |
| topic |
QC1 Physics (General) |
| spellingShingle |
QC1 Physics (General) Munir, Tariq DC And RF Characterization Of n-GaN Schottky Diode For Microwave Application |
| description |
Gallium nitride is a promising wide bandgap semiconductor material for high-power, high temperature and high frequency device applications. However, there are still a number of factors that are limiting the material to reach a satisfactory device performance. Among them the most important and critical factors are the reverse leakage current, series resistance, junction capacitance and thermal stability that limits Schottky diode performance on gallium nitride for Direct Current (DC) and Radio Frequency (RF) characteristics. To overcome these limitations we studied the influence of metal contact, contact area, thermal behavior and edge termination on DC and RF characteristics of n-GaN Schottky diode by simulation and fabrication approach. |
| format |
Thesis |
| qualification_name |
Doctor of Philosophy (PhD.) |
| qualification_level |
Doctorate |
| author |
Munir, Tariq |
| author_facet |
Munir, Tariq |
| author_sort |
Munir, Tariq |
| title |
DC And RF Characterization Of n-GaN Schottky Diode For Microwave Application |
| title_short |
DC And RF Characterization Of n-GaN Schottky Diode For Microwave Application |
| title_full |
DC And RF Characterization Of n-GaN Schottky Diode For Microwave Application |
| title_fullStr |
DC And RF Characterization Of n-GaN Schottky Diode For Microwave Application |
| title_full_unstemmed |
DC And RF Characterization Of n-GaN Schottky Diode For Microwave Application |
| title_sort |
dc and rf characterization of n-gan schottky diode for microwave application |
| granting_institution |
Universiti Sains Malaysia |
| granting_department |
Pusat Pengajian Sains Fizik |
| publishDate |
2011 |
| url |
http://eprints.usm.my/42797/1/TARIQ_MUNIR.pdf |
| _version_ |
1747821102397128704 |