DC And RF Characterization Of n-GaN Schottky Diode For Microwave Application

DC And RF Characterization Of n-GaN Schottky Diode For Microwave Application

Gallium nitride is a promising wide bandgap semiconductor material for high-power, high temperature and high frequency device applications. However, there are still a number of factors that are limiting the material to reach a satisfactory device performance. Among them the most important and critic...

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書目詳細資料
主要作者:	Munir, Tariq
格式:	Thesis
語言:	English
出版:	2011
主題:	QC1 Physics (General)
在線閱讀:	http://eprints.usm.my/42797/1/TARIQ_MUNIR.pdf
標簽:	添加標簽沒有標簽, 成為第一個標記此記錄!

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