DC And RF Characterization Of n-GaN Schottky Diode For Microwave Application

DC And RF Characterization Of n-GaN Schottky Diode For Microwave Application

Gallium nitride is a promising wide bandgap semiconductor material for high-power, high temperature and high frequency device applications. However, there are still a number of factors that are limiting the material to reach a satisfactory device performance. Among them the most important and critic...

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书目详细资料
主要作者:	Munir, Tariq
格式:	Thesis
语言:	English
出版:	2011
主题:	QC1 Physics (General)
在线阅读:	http://eprints.usm.my/42797/1/TARIQ_MUNIR.pdf
标签:	添加标签没有标签, 成为第一个标记此记录!

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