DC And RF Characterization Of n-GaN Schottky Diode For Microwave Application
Gallium nitride is a promising wide bandgap semiconductor material for high-power, high temperature and high frequency device applications. However, there are still a number of factors that are limiting the material to reach a satisfactory device performance. Among them the most important and critic...
Saved in:
| 主要作者: | |
|---|---|
| 格式: | Thesis |
| 語言: | English |
| 出版: |
2011
|
| 主題: | |
| 在線閱讀: | http://eprints.usm.my/42797/1/TARIQ_MUNIR.pdf |
| 標簽: |
添加標簽
沒有標簽, 成為第一個標記此記錄!
|