Polycrystalline GaN Layer On M-Plane Sapphire Substrate For Metal-Semiconductor-Metal Photodetector

This thesis describes work on depositing polycrystalline gallium nitride (GaN) on m-plane sapphire substrate using cost effective physical deposition technique; electron beam (e-beam) evaporator and radio frequency (RF) sputtering, followed by annealing treatment in ammonia (NH3) ambient. The work w...

Full description

Saved in:

Bibliographic Details
Main Author:	Kamarulzaman, Azharul Ariff
Format:	Thesis
Language:	English
Published:	2017
Subjects:	QC1 Physics (General)
Online Access:	http://eprints.usm.my/42902/1/AZHARUL_ARIFF__KAMARULZAMAN.pdf
Tags:	Add Tag No Tags, Be the first to tag this record!

id	my-usm-ep.42902
record_format	uketd_dc
spelling	my-usm-ep.429022019-04-12T05:24:53Z Polycrystalline GaN Layer On M-Plane Sapphire Substrate For Metal-Semiconductor-Metal Photodetector 2017-12 Kamarulzaman, Azharul Ariff QC1 Physics (General) This thesis describes work on depositing polycrystalline gallium nitride (GaN) on m-plane sapphire substrate using cost effective physical deposition technique; electron beam (e-beam) evaporator and radio frequency (RF) sputtering, followed by annealing treatment in ammonia (NH3) ambient. The work was then extended to develop metal-semiconductor-metal (MSM) photodetector using the most possible metal/metal oxide contact, to increase the efficiency of the device. The initial part of this thesis focus on ameliorating the properties of the polycrystalline GaN layer by controlling gas ambient, time, temperature, and gas flow rate of the annealing treatment. 2017-12 Thesis http://eprints.usm.my/42902/ http://eprints.usm.my/42902/1/AZHARUL_ARIFF__KAMARULZAMAN.pdf application/pdf en public phd doctoral Universiti Sains Malaysia Institut Penyelidikan dan Teknologi Nano Optoelektronik
institution	Universiti Sains Malaysia
collection	USM Institutional Repository
language	English
topic	QC1 Physics (General)
spellingShingle	QC1 Physics (General) Kamarulzaman, Azharul Ariff Polycrystalline GaN Layer On M-Plane Sapphire Substrate For Metal-Semiconductor-Metal Photodetector
description	This thesis describes work on depositing polycrystalline gallium nitride (GaN) on m-plane sapphire substrate using cost effective physical deposition technique; electron beam (e-beam) evaporator and radio frequency (RF) sputtering, followed by annealing treatment in ammonia (NH3) ambient. The work was then extended to develop metal-semiconductor-metal (MSM) photodetector using the most possible metal/metal oxide contact, to increase the efficiency of the device. The initial part of this thesis focus on ameliorating the properties of the polycrystalline GaN layer by controlling gas ambient, time, temperature, and gas flow rate of the annealing treatment.
format	Thesis
qualification_name	Doctor of Philosophy (PhD.)
qualification_level	Doctorate
author	Kamarulzaman, Azharul Ariff
author_facet	Kamarulzaman, Azharul Ariff
author_sort	Kamarulzaman, Azharul Ariff
title	Polycrystalline GaN Layer On M-Plane Sapphire Substrate For Metal-Semiconductor-Metal Photodetector
title_short	Polycrystalline GaN Layer On M-Plane Sapphire Substrate For Metal-Semiconductor-Metal Photodetector
title_full	Polycrystalline GaN Layer On M-Plane Sapphire Substrate For Metal-Semiconductor-Metal Photodetector
title_fullStr	Polycrystalline GaN Layer On M-Plane Sapphire Substrate For Metal-Semiconductor-Metal Photodetector
title_full_unstemmed	Polycrystalline GaN Layer On M-Plane Sapphire Substrate For Metal-Semiconductor-Metal Photodetector
title_sort	polycrystalline gan layer on m-plane sapphire substrate for metal-semiconductor-metal photodetector
granting_institution	Universiti Sains Malaysia
granting_department	Institut Penyelidikan dan Teknologi Nano Optoelektronik
publishDate	2017
url	http://eprints.usm.my/42902/1/AZHARUL_ARIFF__KAMARULZAMAN.pdf
_version_	1747821123734601728

Polycrystalline GaN Layer On M-Plane Sapphire Substrate For Metal-Semiconductor-Metal Photodetector

Similar Items