Polycrystalline GaN Layer On M-Plane Sapphire Substrate For Metal-Semiconductor-Metal Photodetector
This thesis describes work on depositing polycrystalline gallium nitride (GaN) on m-plane sapphire substrate using cost effective physical deposition technique; electron beam (e-beam) evaporator and radio frequency (RF) sputtering, followed by annealing treatment in ammonia (NH3) ambient. The work w...
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| 格式: | Thesis |
| 语言: | English |
| 出版: |
2017
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| 主题: | |
| 在线阅读: | http://eprints.usm.my/42902/1/AZHARUL_ARIFF__KAMARULZAMAN.pdf |
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