A Study On Process-Generated Crystal Defects And Corresponding Leakage Current Of P-N Junctions In Bipolar Transistors
An investigation into excess reverse leakage current of p-n junction process control structures in an industrial bipolar junction transistor technology is detailed in this work. Excess leakage is shown to be caused by rod-like crystal defects generated from a boron implantation process. The ro...
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2010
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my-usm-ep.429122019-04-12T05:26:50Z A Study On Process-Generated Crystal Defects And Corresponding Leakage Current Of P-N Junctions In Bipolar Transistors 2010-06 Cheah , Chun Yee QC1 Physics (General) An investigation into excess reverse leakage current of p-n junction process control structures in an industrial bipolar junction transistor technology is detailed in this work. Excess leakage is shown to be caused by rod-like crystal defects generated from a boron implantation process. The rod-like defects are suggested to consist of selfinterstitials in the silicon lattice. The defects were reduced by optimizing the scattering oxide growth prior to implantation. Phenomenological models are then proposed to explain how self-interstitials were reduced by process optimization. Oxidation was performed in dry ambient and above the viscous flow temperature to relieve the interfacial stress during oxide growth. It is suggested that by doing so, interstitial injection into silicon is eliminated. 2010-06 Thesis http://eprints.usm.my/42912/ http://eprints.usm.my/42912/1/Cheah_Chun_Yee24.pdf application/pdf en public masters Universiti Sains Malaysia Pusat Pengajian Sains Fizik |
| institution |
Universiti Sains Malaysia |
| collection |
USM Institutional Repository |
| language |
English |
| topic |
QC1 Physics (General) |
| spellingShingle |
QC1 Physics (General) Cheah , Chun Yee A Study On Process-Generated Crystal Defects And Corresponding Leakage Current Of P-N Junctions In Bipolar Transistors |
| description |
An investigation into excess reverse leakage current of p-n junction process
control structures in an industrial bipolar junction transistor technology is detailed in this
work. Excess leakage is shown to be caused by rod-like crystal defects generated from a
boron implantation process. The rod-like defects are suggested to consist of selfinterstitials
in the silicon lattice. The defects were reduced by optimizing the scattering
oxide growth prior to implantation. Phenomenological models are then proposed to
explain how self-interstitials were reduced by process optimization. Oxidation was
performed in dry ambient and above the viscous flow temperature to relieve the
interfacial stress during oxide growth. It is suggested that by doing so, interstitial
injection into silicon is eliminated. |
| format |
Thesis |
| qualification_level |
Master's degree |
| author |
Cheah , Chun Yee |
| author_facet |
Cheah , Chun Yee |
| author_sort |
Cheah , Chun Yee |
| title |
A Study On Process-Generated Crystal Defects
And Corresponding Leakage Current Of P-N Junctions In
Bipolar Transistors
|
| title_short |
A Study On Process-Generated Crystal Defects
And Corresponding Leakage Current Of P-N Junctions In
Bipolar Transistors
|
| title_full |
A Study On Process-Generated Crystal Defects
And Corresponding Leakage Current Of P-N Junctions In
Bipolar Transistors
|
| title_fullStr |
A Study On Process-Generated Crystal Defects
And Corresponding Leakage Current Of P-N Junctions In
Bipolar Transistors
|
| title_full_unstemmed |
A Study On Process-Generated Crystal Defects
And Corresponding Leakage Current Of P-N Junctions In
Bipolar Transistors
|
| title_sort |
study on process-generated crystal defects
and corresponding leakage current of p-n junctions in
bipolar transistors |
| granting_institution |
Universiti Sains Malaysia |
| granting_department |
Pusat Pengajian Sains Fizik |
| publishDate |
2010 |
| url |
http://eprints.usm.my/42912/1/Cheah_Chun_Yee24.pdf |
| _version_ |
1747821126184075264 |