Investigation Of Metal Organic Deposition Derived Cerium Oxide Thin Films On Silicon Wafer

Cerium oxide (CeO2) thin films have been formed on silicon (Si) substrates via metal organic decomposition route in order to resolve the usefulness of this oxide as an alternative gate dielectric for Si-based metal-oxide-semiconductor (MOS) applications. Salts of cerium(III) nitrate and ceriu...

Full description

Saved in:
Bibliographic Details
Main Author: Jasni, Farah Anis
Format: Thesis
Language:English
Published: 2009
Subjects:
Online Access:http://eprints.usm.my/42928/1/Farah_Anis_Binti_Jasni24.pdf
Tags: Add Tag
No Tags, Be the first to tag this record!
id my-usm-ep.42928
record_format uketd_dc
spelling my-usm-ep.429282019-04-12T05:26:59Z Investigation Of Metal Organic Deposition Derived Cerium Oxide Thin Films On Silicon Wafer 2009-12 Jasni, Farah Anis TN1-997 Mining engineering. Metallurgy Cerium oxide (CeO2) thin films have been formed on silicon (Si) substrates via metal organic decomposition route in order to resolve the usefulness of this oxide as an alternative gate dielectric for Si-based metal-oxide-semiconductor (MOS) applications. Salts of cerium(III) nitrate and cerium(III) acetylacetonate were independently used as the starting material with the addition of methanol and acetic acid to form a constant concentration of 0.25 M. Solution was spin coated on a Si substrate. Conversion to oxide was done by annealing at temperatures ranging from 400oC to 1000oC for 15 minutes in argon. The samples were quenched to room temperature. Chemical analysis via X-ray diffraction methods and Raman spectroscopy indicated that CeO2 formed on the substrate after annealing. Structure and phase composition of the films, after heat treatment, were strongly temperature dependent. Surface morphologies were characterized by field emission scanning electron microscope. The morphologies were strongly dependent on the initial cerium salts being used and temperature of annealing. Films fabricated via cerium(III) nitrate showed apparent cracking and peeling. 2009-12 Thesis http://eprints.usm.my/42928/ http://eprints.usm.my/42928/1/Farah_Anis_Binti_Jasni24.pdf application/pdf en public masters Universiti Sains Malaysia Pusat Pengajian Kejuruteraan Bahan & Sumber Mineral
institution Universiti Sains Malaysia
collection USM Institutional Repository
language English
topic TN1-997 Mining engineering
Metallurgy
spellingShingle TN1-997 Mining engineering
Metallurgy
Jasni, Farah Anis
Investigation Of Metal Organic Deposition Derived Cerium Oxide Thin Films On Silicon Wafer
description Cerium oxide (CeO2) thin films have been formed on silicon (Si) substrates via metal organic decomposition route in order to resolve the usefulness of this oxide as an alternative gate dielectric for Si-based metal-oxide-semiconductor (MOS) applications. Salts of cerium(III) nitrate and cerium(III) acetylacetonate were independently used as the starting material with the addition of methanol and acetic acid to form a constant concentration of 0.25 M. Solution was spin coated on a Si substrate. Conversion to oxide was done by annealing at temperatures ranging from 400oC to 1000oC for 15 minutes in argon. The samples were quenched to room temperature. Chemical analysis via X-ray diffraction methods and Raman spectroscopy indicated that CeO2 formed on the substrate after annealing. Structure and phase composition of the films, after heat treatment, were strongly temperature dependent. Surface morphologies were characterized by field emission scanning electron microscope. The morphologies were strongly dependent on the initial cerium salts being used and temperature of annealing. Films fabricated via cerium(III) nitrate showed apparent cracking and peeling.
format Thesis
qualification_level Master's degree
author Jasni, Farah Anis
author_facet Jasni, Farah Anis
author_sort Jasni, Farah Anis
title Investigation Of Metal Organic Deposition Derived Cerium Oxide Thin Films On Silicon Wafer
title_short Investigation Of Metal Organic Deposition Derived Cerium Oxide Thin Films On Silicon Wafer
title_full Investigation Of Metal Organic Deposition Derived Cerium Oxide Thin Films On Silicon Wafer
title_fullStr Investigation Of Metal Organic Deposition Derived Cerium Oxide Thin Films On Silicon Wafer
title_full_unstemmed Investigation Of Metal Organic Deposition Derived Cerium Oxide Thin Films On Silicon Wafer
title_sort investigation of metal organic deposition derived cerium oxide thin films on silicon wafer
granting_institution Universiti Sains Malaysia
granting_department Pusat Pengajian Kejuruteraan Bahan & Sumber Mineral
publishDate 2009
url http://eprints.usm.my/42928/1/Farah_Anis_Binti_Jasni24.pdf
_version_ 1747821129609773056