Studies Of The Effect Of Post Deposition Annealing To The Ceo2 Thin Film On P-Type Silicon And N-Type Silicon Carbide Substrates

Cerium Oxide (CeO2) thin film has been deposited on silicon (Si) and silicon carbide (SiC) substrates using a radio frequency magnetron sputtering technique. The effect of post deposition annealing at different temperatures (400, 600, 800 and 1000oC) in argon (Ar) ambient for 30 minutes has been inv...

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Main Author:	Chuah, Soo Kiet
Format:	Thesis
Language:	English
Published:	2011
Subjects:	TN1-997 Mining engineering Metallurgy
Online Access:	http://eprints.usm.my/43243/1/CHUAH%20SOO%20KIET.pdf
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id	my-usm-ep.43243
record_format	uketd_dc
spelling	my-usm-ep.432432019-04-12T05:26:29Z Studies Of The Effect Of Post Deposition Annealing To The Ceo2 Thin Film On P-Type Silicon And N-Type Silicon Carbide Substrates 2011-10 Chuah, Soo Kiet TN1-997 Mining engineering. Metallurgy Cerium Oxide (CeO2) thin film has been deposited on silicon (Si) and silicon carbide (SiC) substrates using a radio frequency magnetron sputtering technique. The effect of post deposition annealing at different temperatures (400, 600, 800 and 1000oC) in argon (Ar) ambient for 30 minutes has been investigated on p-type Si and n-type SiC substrates. The thickness of the CeO2 thin films on Si and SiC substrates are in the range of 30 to 40 nm. Field emission scanning electron microscopy and atomic force microscopy show that both CeO2 thin films on Si and SiC substrates are free of physical defects and the root mean square surface roughness are decreasing as the annealing temperature increases. 2011-10 Thesis http://eprints.usm.my/43243/ http://eprints.usm.my/43243/1/CHUAH%20SOO%20KIET.pdf application/pdf en public masters Universiti Sains Malaysia Pusat Pengajian Kejuteraan Bahan & Sumber Mineral
institution	Universiti Sains Malaysia
collection	USM Institutional Repository
language	English
topic	TN1-997 Mining engineering Metallurgy
spellingShingle	TN1-997 Mining engineering Metallurgy Chuah, Soo Kiet Studies Of The Effect Of Post Deposition Annealing To The Ceo2 Thin Film On P-Type Silicon And N-Type Silicon Carbide Substrates
description	Cerium Oxide (CeO2) thin film has been deposited on silicon (Si) and silicon carbide (SiC) substrates using a radio frequency magnetron sputtering technique. The effect of post deposition annealing at different temperatures (400, 600, 800 and 1000oC) in argon (Ar) ambient for 30 minutes has been investigated on p-type Si and n-type SiC substrates. The thickness of the CeO2 thin films on Si and SiC substrates are in the range of 30 to 40 nm. Field emission scanning electron microscopy and atomic force microscopy show that both CeO2 thin films on Si and SiC substrates are free of physical defects and the root mean square surface roughness are decreasing as the annealing temperature increases.
format	Thesis
qualification_level	Master's degree
author	Chuah, Soo Kiet
author_facet	Chuah, Soo Kiet
author_sort	Chuah, Soo Kiet
title	Studies Of The Effect Of Post Deposition Annealing To The Ceo2 Thin Film On P-Type Silicon And N-Type Silicon Carbide Substrates
title_short	Studies Of The Effect Of Post Deposition Annealing To The Ceo2 Thin Film On P-Type Silicon And N-Type Silicon Carbide Substrates
title_full	Studies Of The Effect Of Post Deposition Annealing To The Ceo2 Thin Film On P-Type Silicon And N-Type Silicon Carbide Substrates
title_fullStr	Studies Of The Effect Of Post Deposition Annealing To The Ceo2 Thin Film On P-Type Silicon And N-Type Silicon Carbide Substrates
title_full_unstemmed	Studies Of The Effect Of Post Deposition Annealing To The Ceo2 Thin Film On P-Type Silicon And N-Type Silicon Carbide Substrates
title_sort	studies of the effect of post deposition annealing to the ceo2 thin film on p-type silicon and n-type silicon carbide substrates
granting_institution	Universiti Sains Malaysia
granting_department	Pusat Pengajian Kejuteraan Bahan & Sumber Mineral
publishDate	2011
url	http://eprints.usm.my/43243/1/CHUAH%20SOO%20KIET.pdf
_version_	1747821185626800128

Studies Of The Effect Of Post Deposition Annealing To The Ceo2 Thin Film On P-Type Silicon And N-Type Silicon Carbide Substrates

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