Effect Of Tetramethylammonium Hydroxide (TMAH) Etchant On The Formation Of Silicon Nanowires Transistor Patterned By Atomic Force Microscopy (AFM) Lithography

In this research, AFM lithography was performed to create nanoscale oxide pattern of silicon nanowires transistor (SiNWT) structure via local anodic oxidation (LAO) process on silicon on insulator (SOI) surface. These nanoscale oxide patterns will act as a mask to protect silicon layer during etchin...

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Main Author: Lew, Kam Chung
Format: Thesis
Language:English
Published: 2011
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Online Access:http://eprints.usm.my/43362/1/LEW%20KAM%20CHUNG.pdf
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spelling my-usm-ep.433622019-04-12T05:26:29Z Effect Of Tetramethylammonium Hydroxide (TMAH) Etchant On The Formation Of Silicon Nanowires Transistor Patterned By Atomic Force Microscopy (AFM) Lithography 2011-10 Lew, Kam Chung TN1-997 Mining engineering. Metallurgy In this research, AFM lithography was performed to create nanoscale oxide pattern of silicon nanowires transistor (SiNWT) structure via local anodic oxidation (LAO) process on silicon on insulator (SOI) surface. These nanoscale oxide patterns will act as a mask to protect silicon layer during etching. The SiNWT structures consist of a nanowire as a channel with contact pads of source (S), drain (D) and lateral gate (G). The fabricated device structure was then wet chemically etched with tetramethylammonium hydroxide (TMAH) and hydrofluoric acid (HF) to remove the uncover silicon layer and oxide layer, respectively. 2011-10 Thesis http://eprints.usm.my/43362/ http://eprints.usm.my/43362/1/LEW%20KAM%20CHUNG.pdf application/pdf en public masters Universiti Sains Malaysia Pusat Pengajian Kejuteraan Bahan & Sumber Mineral
institution Universiti Sains Malaysia
collection USM Institutional Repository
language English
topic TN1-997 Mining engineering
Metallurgy
spellingShingle TN1-997 Mining engineering
Metallurgy
Lew, Kam Chung
Effect Of Tetramethylammonium Hydroxide (TMAH) Etchant On The Formation Of Silicon Nanowires Transistor Patterned By Atomic Force Microscopy (AFM) Lithography
description In this research, AFM lithography was performed to create nanoscale oxide pattern of silicon nanowires transistor (SiNWT) structure via local anodic oxidation (LAO) process on silicon on insulator (SOI) surface. These nanoscale oxide patterns will act as a mask to protect silicon layer during etching. The SiNWT structures consist of a nanowire as a channel with contact pads of source (S), drain (D) and lateral gate (G). The fabricated device structure was then wet chemically etched with tetramethylammonium hydroxide (TMAH) and hydrofluoric acid (HF) to remove the uncover silicon layer and oxide layer, respectively.
format Thesis
qualification_level Master's degree
author Lew, Kam Chung
author_facet Lew, Kam Chung
author_sort Lew, Kam Chung
title Effect Of Tetramethylammonium Hydroxide (TMAH) Etchant On The Formation Of Silicon Nanowires Transistor Patterned By Atomic Force Microscopy (AFM) Lithography
title_short Effect Of Tetramethylammonium Hydroxide (TMAH) Etchant On The Formation Of Silicon Nanowires Transistor Patterned By Atomic Force Microscopy (AFM) Lithography
title_full Effect Of Tetramethylammonium Hydroxide (TMAH) Etchant On The Formation Of Silicon Nanowires Transistor Patterned By Atomic Force Microscopy (AFM) Lithography
title_fullStr Effect Of Tetramethylammonium Hydroxide (TMAH) Etchant On The Formation Of Silicon Nanowires Transistor Patterned By Atomic Force Microscopy (AFM) Lithography
title_full_unstemmed Effect Of Tetramethylammonium Hydroxide (TMAH) Etchant On The Formation Of Silicon Nanowires Transistor Patterned By Atomic Force Microscopy (AFM) Lithography
title_sort effect of tetramethylammonium hydroxide (tmah) etchant on the formation of silicon nanowires transistor patterned by atomic force microscopy (afm) lithography
granting_institution Universiti Sains Malaysia
granting_department Pusat Pengajian Kejuteraan Bahan & Sumber Mineral
publishDate 2011
url http://eprints.usm.my/43362/1/LEW%20KAM%20CHUNG.pdf
_version_ 1747821200006971392