Effect Of Tetramethylammonium Hydroxide (TMAH) Etchant On The Formation Of Silicon Nanowires Transistor Patterned By Atomic Force Microscopy (AFM) Lithography
In this research, AFM lithography was performed to create nanoscale oxide pattern of silicon nanowires transistor (SiNWT) structure via local anodic oxidation (LAO) process on silicon on insulator (SOI) surface. These nanoscale oxide patterns will act as a mask to protect silicon layer during etchin...
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my-usm-ep.433622019-04-12T05:26:29Z Effect Of Tetramethylammonium Hydroxide (TMAH) Etchant On The Formation Of Silicon Nanowires Transistor Patterned By Atomic Force Microscopy (AFM) Lithography 2011-10 Lew, Kam Chung TN1-997 Mining engineering. Metallurgy In this research, AFM lithography was performed to create nanoscale oxide pattern of silicon nanowires transistor (SiNWT) structure via local anodic oxidation (LAO) process on silicon on insulator (SOI) surface. These nanoscale oxide patterns will act as a mask to protect silicon layer during etching. The SiNWT structures consist of a nanowire as a channel with contact pads of source (S), drain (D) and lateral gate (G). The fabricated device structure was then wet chemically etched with tetramethylammonium hydroxide (TMAH) and hydrofluoric acid (HF) to remove the uncover silicon layer and oxide layer, respectively. 2011-10 Thesis http://eprints.usm.my/43362/ http://eprints.usm.my/43362/1/LEW%20KAM%20CHUNG.pdf application/pdf en public masters Universiti Sains Malaysia Pusat Pengajian Kejuteraan Bahan & Sumber Mineral |
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Universiti Sains Malaysia |
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English |
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TN1-997 Mining engineering Metallurgy |
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TN1-997 Mining engineering Metallurgy Lew, Kam Chung Effect Of Tetramethylammonium Hydroxide (TMAH) Etchant On The Formation Of Silicon Nanowires Transistor Patterned By Atomic Force Microscopy (AFM) Lithography |
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In this research, AFM lithography was performed to create nanoscale oxide pattern of silicon nanowires transistor (SiNWT) structure via local anodic oxidation (LAO) process on silicon on insulator (SOI) surface. These nanoscale oxide patterns will act as a mask to protect silicon layer during etching. The SiNWT structures consist of a nanowire as a channel with contact pads of source (S), drain (D) and lateral gate (G). The fabricated device structure was then wet chemically etched with tetramethylammonium hydroxide (TMAH) and hydrofluoric acid (HF) to remove the
uncover silicon layer and oxide layer, respectively. |
format |
Thesis |
qualification_level |
Master's degree |
author |
Lew, Kam Chung |
author_facet |
Lew, Kam Chung |
author_sort |
Lew, Kam Chung |
title |
Effect Of Tetramethylammonium Hydroxide (TMAH) Etchant On The Formation Of Silicon Nanowires Transistor Patterned By Atomic Force Microscopy (AFM)
Lithography |
title_short |
Effect Of Tetramethylammonium Hydroxide (TMAH) Etchant On The Formation Of Silicon Nanowires Transistor Patterned By Atomic Force Microscopy (AFM)
Lithography |
title_full |
Effect Of Tetramethylammonium Hydroxide (TMAH) Etchant On The Formation Of Silicon Nanowires Transistor Patterned By Atomic Force Microscopy (AFM)
Lithography |
title_fullStr |
Effect Of Tetramethylammonium Hydroxide (TMAH) Etchant On The Formation Of Silicon Nanowires Transistor Patterned By Atomic Force Microscopy (AFM)
Lithography |
title_full_unstemmed |
Effect Of Tetramethylammonium Hydroxide (TMAH) Etchant On The Formation Of Silicon Nanowires Transistor Patterned By Atomic Force Microscopy (AFM)
Lithography |
title_sort |
effect of tetramethylammonium hydroxide (tmah) etchant on the formation of silicon nanowires transistor patterned by atomic force microscopy (afm)
lithography |
granting_institution |
Universiti Sains Malaysia |
granting_department |
Pusat Pengajian Kejuteraan Bahan & Sumber Mineral |
publishDate |
2011 |
url |
http://eprints.usm.my/43362/1/LEW%20KAM%20CHUNG.pdf |
_version_ |
1747821200006971392 |