Thermal And Optical Properties Of High Power Infrared Emitter Utilizing Transient Dual Interface Method

High power IR emitters are new emerging technology in solid state lighting market. Since thermal problem is becoming more crucial and is believed to be directly responsible for their limited performance and failures, this master research aims to study thermal behavior as well as optical properties o...

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Main Author:	Ching, Chin Peng
Format:	Thesis
Language:	English
Published:	2013
Subjects:	QC1 Physics (General)
Online Access:	http://eprints.usm.my/43577/1/Ching%20Chin%20Peng24.pdf
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spelling	my-usm-ep.435772019-04-12T05:26:16Z Thermal And Optical Properties Of High Power Infrared Emitter Utilizing Transient Dual Interface Method 2013-05 Ching, Chin Peng QC1 Physics (General) High power IR emitters are new emerging technology in solid state lighting market. Since thermal problem is becoming more crucial and is believed to be directly responsible for their limited performance and failures, this master research aims to study thermal behavior as well as optical properties of the high power IR emitters in terms of chip and package levels. A total of eight experiments have been performed to enhance a better understanding on the optimum operating conditions and also to identify factors that would affect the thermal performance of the IR packages. It was found that thermal resistances varied as a function of input current and ambient temperature. Besides, measurement carried out on a cold-plate offered much lower total thermal resistance RthJA, 5.24 K/W compared to that performed in an oven, 35.5 K/W. In addition, it was essential to consider optical power in the evaluation of structure functions to obtain accurate real thermal resistances of the IR emitters since the electrical junction-to-board thermal resistance RthJB obtained without optical power consideration was 35.2% lower than its real value. By utilizing transient dual interface method, the exact point of separation between the IR package and external heat sink, i.e., MCPCB or cold-plate could be precisely determined. As a result, real junction-to-case thermal resistance RthJC and junction-to-board thermal resistance RthJB were 4.62 ± 0.05 K/W and 10.15 ± 0.05 K/W respectively. 2013-05 Thesis http://eprints.usm.my/43577/ http://eprints.usm.my/43577/1/Ching%20Chin%20Peng24.pdf application/pdf en public masters Universiti Sains Malaysia Pusat Pengajian Sains Fizik
institution	Universiti Sains Malaysia
collection	USM Institutional Repository
language	English
topic	QC1 Physics (General)
spellingShingle	QC1 Physics (General) Ching, Chin Peng Thermal And Optical Properties Of High Power Infrared Emitter Utilizing Transient Dual Interface Method
description	High power IR emitters are new emerging technology in solid state lighting market. Since thermal problem is becoming more crucial and is believed to be directly responsible for their limited performance and failures, this master research aims to study thermal behavior as well as optical properties of the high power IR emitters in terms of chip and package levels. A total of eight experiments have been performed to enhance a better understanding on the optimum operating conditions and also to identify factors that would affect the thermal performance of the IR packages. It was found that thermal resistances varied as a function of input current and ambient temperature. Besides, measurement carried out on a cold-plate offered much lower total thermal resistance RthJA, 5.24 K/W compared to that performed in an oven, 35.5 K/W. In addition, it was essential to consider optical power in the evaluation of structure functions to obtain accurate real thermal resistances of the IR emitters since the electrical junction-to-board thermal resistance RthJB obtained without optical power consideration was 35.2% lower than its real value. By utilizing transient dual interface method, the exact point of separation between the IR package and external heat sink, i.e., MCPCB or cold-plate could be precisely determined. As a result, real junction-to-case thermal resistance RthJC and junction-to-board thermal resistance RthJB were 4.62 ± 0.05 K/W and 10.15 ± 0.05 K/W respectively.
format	Thesis
qualification_level	Master's degree
author	Ching, Chin Peng
author_facet	Ching, Chin Peng
author_sort	Ching, Chin Peng
title	Thermal And Optical Properties Of High Power Infrared Emitter Utilizing Transient Dual Interface Method
title_short	Thermal And Optical Properties Of High Power Infrared Emitter Utilizing Transient Dual Interface Method
title_full	Thermal And Optical Properties Of High Power Infrared Emitter Utilizing Transient Dual Interface Method
title_fullStr	Thermal And Optical Properties Of High Power Infrared Emitter Utilizing Transient Dual Interface Method
title_full_unstemmed	Thermal And Optical Properties Of High Power Infrared Emitter Utilizing Transient Dual Interface Method
title_sort	thermal and optical properties of high power infrared emitter utilizing transient dual interface method
granting_institution	Universiti Sains Malaysia
granting_department	Pusat Pengajian Sains Fizik
publishDate	2013
url	http://eprints.usm.my/43577/1/Ching%20Chin%20Peng24.pdf
_version_	1747821240313184256

Thermal And Optical Properties Of High Power Infrared Emitter Utilizing Transient Dual Interface Method

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