Development Of Inline Rapid Thermal Transient Test System For Crack Detection Of Alingap On Germanium Carrier

LEDs are the ultimate light source in the lighting technology and growing at double digit percentage for the past few decades. Despite of many virtues in LEDs, there are many challenges it have. One of it is die crack. In this work, the focus is on die-crack on die substrate of an AlInGaP LED at die...

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Main Author: Annaniah, Luruthudass
Format: Thesis
Language:English
Published: 2018
Subjects:
Online Access:http://eprints.usm.my/43666/1/LURUTHUDASS%20ANNANIAH.pdf
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spelling my-usm-ep.436662020-10-08T03:18:40Z Development Of Inline Rapid Thermal Transient Test System For Crack Detection Of Alingap On Germanium Carrier 2018-02 Annaniah, Luruthudass QC1 Physics (General) LEDs are the ultimate light source in the lighting technology and growing at double digit percentage for the past few decades. Despite of many virtues in LEDs, there are many challenges it have. One of it is die crack. In this work, the focus is on die-crack on die substrate of an AlInGaP LED at die attach (DA) process. Here the impact on electro-optical and thermal properties were investigated and a detection method was invented. The cracks were artificially created at Ge substrate using industrial grade DA equipment at bond force range from 40gF to 210gF. Die-crack length were measured using high magnification scope. 2018-02 Thesis http://eprints.usm.my/43666/ http://eprints.usm.my/43666/1/LURUTHUDASS%20ANNANIAH.pdf application/pdf en public phd doctoral Universiti Sains Malaysia Pusat Pengajian Sains Fizik
institution Universiti Sains Malaysia
collection USM Institutional Repository
language English
topic QC1 Physics (General)
spellingShingle QC1 Physics (General)
Annaniah, Luruthudass
Development Of Inline Rapid Thermal Transient Test System For Crack Detection Of Alingap On Germanium Carrier
description LEDs are the ultimate light source in the lighting technology and growing at double digit percentage for the past few decades. Despite of many virtues in LEDs, there are many challenges it have. One of it is die crack. In this work, the focus is on die-crack on die substrate of an AlInGaP LED at die attach (DA) process. Here the impact on electro-optical and thermal properties were investigated and a detection method was invented. The cracks were artificially created at Ge substrate using industrial grade DA equipment at bond force range from 40gF to 210gF. Die-crack length were measured using high magnification scope.
format Thesis
qualification_name Doctor of Philosophy (PhD.)
qualification_level Doctorate
author Annaniah, Luruthudass
author_facet Annaniah, Luruthudass
author_sort Annaniah, Luruthudass
title Development Of Inline Rapid Thermal Transient Test System For Crack Detection Of Alingap On Germanium Carrier
title_short Development Of Inline Rapid Thermal Transient Test System For Crack Detection Of Alingap On Germanium Carrier
title_full Development Of Inline Rapid Thermal Transient Test System For Crack Detection Of Alingap On Germanium Carrier
title_fullStr Development Of Inline Rapid Thermal Transient Test System For Crack Detection Of Alingap On Germanium Carrier
title_full_unstemmed Development Of Inline Rapid Thermal Transient Test System For Crack Detection Of Alingap On Germanium Carrier
title_sort development of inline rapid thermal transient test system for crack detection of alingap on germanium carrier
granting_institution Universiti Sains Malaysia
granting_department Pusat Pengajian Sains Fizik
publishDate 2018
url http://eprints.usm.my/43666/1/LURUTHUDASS%20ANNANIAH.pdf
_version_ 1747821258645438464