Structural And Optical Properties Of Sputtered Nanocrystalline Indium Nitride On Silicon Substrates

The aim of this project is to study the growth and characterization of nanocrystalline indium nitride (InN) on silicon (Si) substrates by means of various non-contact and non-destructive characterization tools. These include the scanning electron microscopy (SEM), energy dispersive X-ray (EDX)...

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Main Author:	Amirhoseiny, Maryam
Format:	Thesis
Language:	English
Published:	2013
Subjects:	QC1 Physics (General)
Online Access:	http://eprints.usm.my/43801/1/Maryam%20Amirhoseiny24.pdf
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spelling	my-usm-ep.438012019-04-12T05:26:10Z Structural And Optical Properties Of Sputtered Nanocrystalline Indium Nitride On Silicon Substrates 2013-09 Amirhoseiny, Maryam QC1 Physics (General) The aim of this project is to study the growth and characterization of nanocrystalline indium nitride (InN) on silicon (Si) substrates by means of various non-contact and non-destructive characterization tools. These include the scanning electron microscopy (SEM), energy dispersive X-ray (EDX) analysis, atomic force microscopy (AFM), and X-ray diffraction (XRD) for structural characterization, and Fourier transform infrared (FTIR) spectroscopy, micro-Raman spectroscopy, and photoluminescence (PL) spectroscopy for optical characterization. Initial works on the structural and optical characterization of the nanocrystalline InN grown on anisotropic (110) orientation of sillicon (Si) substrates have been carried out. Studies are, however, focused on optimizing the deposition conditions for growing nanocrystalline InN by radio frequency (RF) sputtering method. All deposited films obtained under different deposition conditions were slightly nitrogen-rich, but increasing the RF power provided more InN compounds in stoichiometric form. XRD results revealed wurtzite nanocrystalline InN films with a (101) preferred growth orientation for all deposited films. The strong PL peak was observed in the energy of 1.9 eV at room temperature. This higher value of the bandgap is due to the Moss–Burstein shift effect. 2013-09 Thesis http://eprints.usm.my/43801/ http://eprints.usm.my/43801/1/Maryam%20Amirhoseiny24.pdf application/pdf en public phd doctoral Universiti Sains Malaysia Pusat Pengajian Sains Fizik
institution	Universiti Sains Malaysia
collection	USM Institutional Repository
language	English
topic	QC1 Physics (General)
spellingShingle	QC1 Physics (General) Amirhoseiny, Maryam Structural And Optical Properties Of Sputtered Nanocrystalline Indium Nitride On Silicon Substrates
description	The aim of this project is to study the growth and characterization of nanocrystalline indium nitride (InN) on silicon (Si) substrates by means of various non-contact and non-destructive characterization tools. These include the scanning electron microscopy (SEM), energy dispersive X-ray (EDX) analysis, atomic force microscopy (AFM), and X-ray diffraction (XRD) for structural characterization, and Fourier transform infrared (FTIR) spectroscopy, micro-Raman spectroscopy, and photoluminescence (PL) spectroscopy for optical characterization. Initial works on the structural and optical characterization of the nanocrystalline InN grown on anisotropic (110) orientation of sillicon (Si) substrates have been carried out. Studies are, however, focused on optimizing the deposition conditions for growing nanocrystalline InN by radio frequency (RF) sputtering method. All deposited films obtained under different deposition conditions were slightly nitrogen-rich, but increasing the RF power provided more InN compounds in stoichiometric form. XRD results revealed wurtzite nanocrystalline InN films with a (101) preferred growth orientation for all deposited films. The strong PL peak was observed in the energy of 1.9 eV at room temperature. This higher value of the bandgap is due to the Moss–Burstein shift effect.
format	Thesis
qualification_name	Doctor of Philosophy (PhD.)
qualification_level	Doctorate
author	Amirhoseiny, Maryam
author_facet	Amirhoseiny, Maryam
author_sort	Amirhoseiny, Maryam
title	Structural And Optical Properties Of Sputtered Nanocrystalline Indium Nitride On Silicon Substrates
title_short	Structural And Optical Properties Of Sputtered Nanocrystalline Indium Nitride On Silicon Substrates
title_full	Structural And Optical Properties Of Sputtered Nanocrystalline Indium Nitride On Silicon Substrates
title_fullStr	Structural And Optical Properties Of Sputtered Nanocrystalline Indium Nitride On Silicon Substrates
title_full_unstemmed	Structural And Optical Properties Of Sputtered Nanocrystalline Indium Nitride On Silicon Substrates
title_sort	structural and optical properties of sputtered nanocrystalline indium nitride on silicon substrates
granting_institution	Universiti Sains Malaysia
granting_department	Pusat Pengajian Sains Fizik
publishDate	2013
url	http://eprints.usm.my/43801/1/Maryam%20Amirhoseiny24.pdf
_version_	1747821282967158784

Structural And Optical Properties Of Sputtered Nanocrystalline Indium Nitride On Silicon Substrates

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