Analytical Modelling Of Breakdown Effect In Graphene Nanoribbon Field Effect Transistor

Since 2004, graphene as transistor channel has drawn huge amount of attention due to its extraordinary scalability and high carrier mobility. In order to open required bandgap, its nanoribbon form is used in transistors. Breakdown effect modelling of the graphene nanoribbon field effect transistors...

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Main Author:	Mahdiar, Hosseinghadiry
Format:	Thesis
Language:	English
Published:	2014
Subjects:	TK1-9971 Electrical engineering Electronics Nuclear engineering
Online Access:	http://eprints.usm.my/46146/1/Mahdiar%20Hosseinghadiry24.pdf
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spelling	my-usm-ep.461462020-02-10T02:50:50Z Analytical Modelling Of Breakdown Effect In Graphene Nanoribbon Field Effect Transistor 2014-01 Mahdiar, Hosseinghadiry TK1-9971 Electrical engineering. Electronics. Nuclear engineering Since 2004, graphene as transistor channel has drawn huge amount of attention due to its extraordinary scalability and high carrier mobility. In order to open required bandgap, its nanoribbon form is used in transistors. Breakdown effect modelling of the graphene nanoribbon field effect transistors (GNRFET) is needed to investigate the limits on operating voltage of the transistor. However, until now there is no study in analytical approach and modelling of the breakdown voltage (BV) effects on the graphene-based transistors. Thus, in this project, semi-analytical models for lateral electric field, length of velocity saturation region (LVSR), ionization coefficient (α), and breakdown voltage (BV) of single- and double-gate graphene nanoribbon field effect transistors (GNRFET) are proposed. As the methodology, the application of Gauss’s law at drain and source regions is employed in order to derive surface potential and lateral electric field equations. Then, LVSR is calculated as a solution of surface potential at saturation condition. The ionization coefficient is modelled and calculated by deriving equations for probability of collisions in ballistic and drift modes based on lucky drift theory of ionization. Then the threshold energy of ionization is computed using simulation and an empirical equation is derived semi-analytically. Finally avalanche breakdown condition is employed to calculate the lateral BV. As a result of this research, simple analytical and semi-analytical models are proposed for the LVSR,α, and BV, which could be used in design and optimization of semiconductor devices and sensors. 2014-01 Thesis http://eprints.usm.my/46146/ http://eprints.usm.my/46146/1/Mahdiar%20Hosseinghadiry24.pdf application/pdf en public phd doctoral Universiti Sains Malaysia Pusat Pengajian Kejuruteraan Elektrik & Elektronik
institution	Universiti Sains Malaysia
collection	USM Institutional Repository
language	English
topic	TK1-9971 Electrical engineering Electronics Nuclear engineering
spellingShingle	TK1-9971 Electrical engineering Electronics Nuclear engineering Mahdiar, Hosseinghadiry Analytical Modelling Of Breakdown Effect In Graphene Nanoribbon Field Effect Transistor
description	Since 2004, graphene as transistor channel has drawn huge amount of attention due to its extraordinary scalability and high carrier mobility. In order to open required bandgap, its nanoribbon form is used in transistors. Breakdown effect modelling of the graphene nanoribbon field effect transistors (GNRFET) is needed to investigate the limits on operating voltage of the transistor. However, until now there is no study in analytical approach and modelling of the breakdown voltage (BV) effects on the graphene-based transistors. Thus, in this project, semi-analytical models for lateral electric field, length of velocity saturation region (LVSR), ionization coefficient (α), and breakdown voltage (BV) of single- and double-gate graphene nanoribbon field effect transistors (GNRFET) are proposed. As the methodology, the application of Gauss’s law at drain and source regions is employed in order to derive surface potential and lateral electric field equations. Then, LVSR is calculated as a solution of surface potential at saturation condition. The ionization coefficient is modelled and calculated by deriving equations for probability of collisions in ballistic and drift modes based on lucky drift theory of ionization. Then the threshold energy of ionization is computed using simulation and an empirical equation is derived semi-analytically. Finally avalanche breakdown condition is employed to calculate the lateral BV. As a result of this research, simple analytical and semi-analytical models are proposed for the LVSR,α, and BV, which could be used in design and optimization of semiconductor devices and sensors.
format	Thesis
qualification_name	Doctor of Philosophy (PhD.)
qualification_level	Doctorate
author	Mahdiar, Hosseinghadiry
author_facet	Mahdiar, Hosseinghadiry
author_sort	Mahdiar, Hosseinghadiry
title	Analytical Modelling Of Breakdown Effect In Graphene Nanoribbon Field Effect Transistor
title_short	Analytical Modelling Of Breakdown Effect In Graphene Nanoribbon Field Effect Transistor
title_full	Analytical Modelling Of Breakdown Effect In Graphene Nanoribbon Field Effect Transistor
title_fullStr	Analytical Modelling Of Breakdown Effect In Graphene Nanoribbon Field Effect Transistor
title_full_unstemmed	Analytical Modelling Of Breakdown Effect In Graphene Nanoribbon Field Effect Transistor
title_sort	analytical modelling of breakdown effect in graphene nanoribbon field effect transistor
granting_institution	Universiti Sains Malaysia
granting_department	Pusat Pengajian Kejuruteraan Elektrik & Elektronik
publishDate	2014
url	http://eprints.usm.my/46146/1/Mahdiar%20Hosseinghadiry24.pdf
_version_	1747821620216463360

Analytical Modelling Of Breakdown Effect In Graphene Nanoribbon Field Effect Transistor

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