Analytical Modelling Of Breakdown Effect In Graphene Nanoribbon Field Effect Transistor
Since 2004, graphene as transistor channel has drawn huge amount of attention due to its extraordinary scalability and high carrier mobility. In order to open required bandgap, its nanoribbon form is used in transistors. Breakdown effect modelling of the graphene nanoribbon field effect transistors...
Saved in:
| 主要作者: | |
|---|---|
| 格式: | Thesis |
| 语言: | English |
| 出版: |
2014
|
| 主题: | |
| 在线阅读: | http://eprints.usm.my/46146/1/Mahdiar%20Hosseinghadiry24.pdf |
| 标签: |
添加标签
没有标签, 成为第一个标记此记录!
|