Analytical Modelling Of Breakdown
Effect In Graphene Nanoribbon Field
Effect Transistor

Analytical Modelling Of Breakdown Effect In Graphene Nanoribbon Field Effect Transistor

Since 2004, graphene as transistor channel has drawn huge amount of attention due to its extraordinary scalability and high carrier mobility. In order to open required bandgap, its nanoribbon form is used in transistors. Breakdown effect modelling of the graphene nanoribbon field effect transistors...

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书目详细资料
主要作者:	Mahdiar, Hosseinghadiry
格式:	Thesis
语言:	English
出版:	2014
主题:	TK1-9971 Electrical engineering Electronics Nuclear engineering
在线阅读:	http://eprints.usm.my/46146/1/Mahdiar%20Hosseinghadiry24.pdf
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