Synthesis And Characterization Of Zno Nanostructures Using Physical Vapor Deposition And Electrochemical Deposition For Optoelectronic Applications

ZnO nanostructures were grown by simple techniques to develop ZnO-based semiconductor photodetectors (PDs) for UV detection. This work employed two techniques, first, physical vapor deposition (PVD) and second, electrochemical deposition (ECD) techniques. In the PVD process, condensed Zn vapor is re...

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Main Author:	Hassan, Nadim Khalid
Format:	Thesis
Language:	English
Published:	2013
Subjects:	QC1 Physics (General)
Online Access:	http://eprints.usm.my/46173/1/Nadim%20Khalid%20Hassan24.pdf
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spelling	my-usm-ep.461732020-02-11T04:40:57Z Synthesis And Characterization Of Zno Nanostructures Using Physical Vapor Deposition And Electrochemical Deposition For Optoelectronic Applications 2013-10 Hassan, Nadim Khalid QC1 Physics (General) ZnO nanostructures were grown by simple techniques to develop ZnO-based semiconductor photodetectors (PDs) for UV detection. This work employed two techniques, first, physical vapor deposition (PVD) and second, electrochemical deposition (ECD) techniques. In the PVD process, condensed Zn vapor is reacted with oxygen via vapor solid mechanism in three-zone tube furnace. The source material for PVD was pure Zn powder evaporated under different reaction conditions. Variations in the reaction time, substrates, and temperature in the furnace were found to control the growth mechanism and morphology of the ZnO nanostructures. For instance, high quality 1D ZnO nanostructures (Rods) were achieved on SiO2 using ZnO thin film as a buffer layer. Also, it was possible to grow tetrapods-like ZnO (TPs) and nanowires with different diameters and lengths as confirmed via SEM imaging. Photoluminescence (PL) measurements at room temperature showed a dominant peak related to a near-band-edge emission at approximately 376 nm with an additional peak related to green-band emission at approximately 520 nm.The highest near-band emission to green band emission ratio of 1D ZnO nanostructures grown on Si(111) could result from the high crystallinity of the fabricated nanostructure. Raman spectra measurements show four peaks, of which E2 high was the dominant peak. The shift in this dominant peak from 437 cm-1 provided accurate information of the stress in the ZnO film lattice. 2013-10 Thesis http://eprints.usm.my/46173/ http://eprints.usm.my/46173/1/Nadim%20Khalid%20Hassan24.pdf application/pdf en public phd doctoral Universiti Sains Malaysia Pusat Pengajian Sains Fizik
institution	Universiti Sains Malaysia
collection	USM Institutional Repository
language	English
topic	QC1 Physics (General)
spellingShingle	QC1 Physics (General) Hassan, Nadim Khalid Synthesis And Characterization Of Zno Nanostructures Using Physical Vapor Deposition And Electrochemical Deposition For Optoelectronic Applications
description	ZnO nanostructures were grown by simple techniques to develop ZnO-based semiconductor photodetectors (PDs) for UV detection. This work employed two techniques, first, physical vapor deposition (PVD) and second, electrochemical deposition (ECD) techniques. In the PVD process, condensed Zn vapor is reacted with oxygen via vapor solid mechanism in three-zone tube furnace. The source material for PVD was pure Zn powder evaporated under different reaction conditions. Variations in the reaction time, substrates, and temperature in the furnace were found to control the growth mechanism and morphology of the ZnO nanostructures. For instance, high quality 1D ZnO nanostructures (Rods) were achieved on SiO2 using ZnO thin film as a buffer layer. Also, it was possible to grow tetrapods-like ZnO (TPs) and nanowires with different diameters and lengths as confirmed via SEM imaging. Photoluminescence (PL) measurements at room temperature showed a dominant peak related to a near-band-edge emission at approximately 376 nm with an additional peak related to green-band emission at approximately 520 nm.The highest near-band emission to green band emission ratio of 1D ZnO nanostructures grown on Si(111) could result from the high crystallinity of the fabricated nanostructure. Raman spectra measurements show four peaks, of which E2 high was the dominant peak. The shift in this dominant peak from 437 cm-1 provided accurate information of the stress in the ZnO film lattice.
format	Thesis
qualification_name	Doctor of Philosophy (PhD.)
qualification_level	Doctorate
author	Hassan, Nadim Khalid
author_facet	Hassan, Nadim Khalid
author_sort	Hassan, Nadim Khalid
title	Synthesis And Characterization Of Zno Nanostructures Using Physical Vapor Deposition And Electrochemical Deposition For Optoelectronic Applications
title_short	Synthesis And Characterization Of Zno Nanostructures Using Physical Vapor Deposition And Electrochemical Deposition For Optoelectronic Applications
title_full	Synthesis And Characterization Of Zno Nanostructures Using Physical Vapor Deposition And Electrochemical Deposition For Optoelectronic Applications
title_fullStr	Synthesis And Characterization Of Zno Nanostructures Using Physical Vapor Deposition And Electrochemical Deposition For Optoelectronic Applications
title_full_unstemmed	Synthesis And Characterization Of Zno Nanostructures Using Physical Vapor Deposition And Electrochemical Deposition For Optoelectronic Applications
title_sort	synthesis and characterization of zno nanostructures using physical vapor deposition and electrochemical deposition for optoelectronic applications
granting_institution	Universiti Sains Malaysia
granting_department	Pusat Pengajian Sains Fizik
publishDate	2013
url	http://eprints.usm.my/46173/1/Nadim%20Khalid%20Hassan24.pdf
_version_	1747821626241581056

Synthesis And Characterization Of Zno Nanostructures Using Physical Vapor Deposition And Electrochemical Deposition For Optoelectronic Applications

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