Electrophoretic Deposition Of Cdse Nanoparticles Photoanode For Quantum Dots Sensitized Solar Cells

CdSe nanoparticle was used as sensitizer in quantum dots sensitized solar cell (QDSSC). CdSe film was deposited on fluorine doped tin oxide (FTO) substrate by using electrophoretic deposition (EPD) as photoanode. The uniformity and coverage of CdSe film leading to improve efficiency and charge trans...

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主要作者: Ishak, Mohamad Nizam
格式: Thesis
语言:English
出版: 2019
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spelling my-usm-ep.467252021-11-17T03:42:12Z Electrophoretic Deposition Of Cdse Nanoparticles Photoanode For Quantum Dots Sensitized Solar Cells 2019-02-01 Ishak, Mohamad Nizam T Technology TA401-492 Materials of engineering and construction. Mechanics of materials CdSe nanoparticle was used as sensitizer in quantum dots sensitized solar cell (QDSSC). CdSe film was deposited on fluorine doped tin oxide (FTO) substrate by using electrophoretic deposition (EPD) as photoanode. The uniformity and coverage of CdSe film leading to improve efficiency and charge transfer of electron in QDSSC. In this research, two type of ligands were studied that were trioctylphosphine oxide (TOPO) and mercaptoundecanoic acid (MUA). TOPO capped CdSe nanoparticles were synthesized by hot injection method and using ligand exchange method to change TOPO capped CdSe to MUA capped CdSe. The purification process of CdSe nanoparticles solution was done with methanol to remove impurities. CdSe nanoparticles with diameter in the range of 2.27 nm to 3.36 nm were used for deposition of single layer and bi-layer of film. The applied voltage from 100 V to 400 V with deposition time of 5 minutes in chloroform solvent was used to deposit CdSe film on FTO by EPD. The CdSe/FTO was assembled with copper(II)sulfide (Cu2S) counter electrode and polysulfide electrolyte for I-V and electrochemical impedance spectroscopy (EIS) measurement for QDSSC. For single layer, the highest efficiency was recorded for CdSe/MUA (3.36 nm) of 0.132% with 195 Ω of Rct and the lowest efficiency was for CdSe/TOPO nanoparticle (2.27 nm) of 0.0164% with 15029 Ω of Rct. The combination of bi-layer for big/small (3.36/2.27 nm) CdSe/TOPO nanoparticles shown highest efficiency of 0.502% with 7258 Ω of Rct as compared to small/big (2.27/3.36 nm) particle that only have efficiency of 0.125% with 10153 Ω of Rct. 2019-02 Thesis http://eprints.usm.my/46725/ http://eprints.usm.my/46725/1/Electrophoretic%20Deposition%20Of%20Cdse%20Nanoparticles%20Photoanode%20For%20Quantum%20Dots%20Sensitized%20Solar%20Cells.pdf application/pdf en public phd doctoral Universiti Sains Malaysia Pusat Pengajian Kejuruteraan Bahan & Sumber Mineral
institution Universiti Sains Malaysia
collection USM Institutional Repository
language English
topic T Technology
T Technology
spellingShingle T Technology
T Technology
Ishak, Mohamad Nizam
Electrophoretic Deposition Of Cdse Nanoparticles Photoanode For Quantum Dots Sensitized Solar Cells
description CdSe nanoparticle was used as sensitizer in quantum dots sensitized solar cell (QDSSC). CdSe film was deposited on fluorine doped tin oxide (FTO) substrate by using electrophoretic deposition (EPD) as photoanode. The uniformity and coverage of CdSe film leading to improve efficiency and charge transfer of electron in QDSSC. In this research, two type of ligands were studied that were trioctylphosphine oxide (TOPO) and mercaptoundecanoic acid (MUA). TOPO capped CdSe nanoparticles were synthesized by hot injection method and using ligand exchange method to change TOPO capped CdSe to MUA capped CdSe. The purification process of CdSe nanoparticles solution was done with methanol to remove impurities. CdSe nanoparticles with diameter in the range of 2.27 nm to 3.36 nm were used for deposition of single layer and bi-layer of film. The applied voltage from 100 V to 400 V with deposition time of 5 minutes in chloroform solvent was used to deposit CdSe film on FTO by EPD. The CdSe/FTO was assembled with copper(II)sulfide (Cu2S) counter electrode and polysulfide electrolyte for I-V and electrochemical impedance spectroscopy (EIS) measurement for QDSSC. For single layer, the highest efficiency was recorded for CdSe/MUA (3.36 nm) of 0.132% with 195 Ω of Rct and the lowest efficiency was for CdSe/TOPO nanoparticle (2.27 nm) of 0.0164% with 15029 Ω of Rct. The combination of bi-layer for big/small (3.36/2.27 nm) CdSe/TOPO nanoparticles shown highest efficiency of 0.502% with 7258 Ω of Rct as compared to small/big (2.27/3.36 nm) particle that only have efficiency of 0.125% with 10153 Ω of Rct.
format Thesis
qualification_name Doctor of Philosophy (PhD.)
qualification_level Doctorate
author Ishak, Mohamad Nizam
author_facet Ishak, Mohamad Nizam
author_sort Ishak, Mohamad Nizam
title Electrophoretic Deposition Of Cdse Nanoparticles Photoanode For Quantum Dots Sensitized Solar Cells
title_short Electrophoretic Deposition Of Cdse Nanoparticles Photoanode For Quantum Dots Sensitized Solar Cells
title_full Electrophoretic Deposition Of Cdse Nanoparticles Photoanode For Quantum Dots Sensitized Solar Cells
title_fullStr Electrophoretic Deposition Of Cdse Nanoparticles Photoanode For Quantum Dots Sensitized Solar Cells
title_full_unstemmed Electrophoretic Deposition Of Cdse Nanoparticles Photoanode For Quantum Dots Sensitized Solar Cells
title_sort electrophoretic deposition of cdse nanoparticles photoanode for quantum dots sensitized solar cells
granting_institution Universiti Sains Malaysia
granting_department Pusat Pengajian Kejuruteraan Bahan & Sumber Mineral
publishDate 2019
url http://eprints.usm.my/46725/1/Electrophoretic%20Deposition%20Of%20Cdse%20Nanoparticles%20Photoanode%20For%20Quantum%20Dots%20Sensitized%20Solar%20Cells.pdf
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