Surface Morphology And Electrical Properties Of Copper-Nickel Alloy Thin Film Deposited On Printed Circuit Board Using Thermal Evaporation Method
The increased in input/output (I/O) density due to the demand of high performances in devices caused the routing density on printed circuit board increased. This caused the board size increases due to the increased of trace width and trace spacing. Apart from that, the consumers preferred a small...
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| Main Author: | |
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| Format: | Thesis |
| Language: | English |
| Published: |
2017
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| Subjects: | |
| Online Access: | http://eprints.usm.my/47315/1/Surface%20Morphology%20And%20Electrical%20Properties%20Of%20Copper-Nickel%20Alloy%20Thin%20Film%20Deposited%20On%20Printed%20Circuit%20Board%20Using%20Thermal%20Evaporation%20Method.pdf |
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| Summary: | The increased in input/output (I/O) density due to the demand of high performances
in devices caused the routing density on printed circuit board increased. This caused
the board size increases due to the increased of trace width and trace spacing. Apart
from that, the consumers preferred a small devices. This definitely against the
customer’s need because increasing in width trace caused the size of package also
increases. One way to overcome this is by replacing the passive resistor with the thin
film resistor. Therefore in this study CuNi thin film was selected as a thin film
resistor material. The experiments consists of 3 parts (1) to measure the thickness of
the thin film with desired resistance (2) to determine the Cu content with the desired
electrical properties (3) to build the prototypes of the thin film resistor into suitable
size as used by the industry and simulate the design to obtain a high value of
insertion loss and low value of return loss. All samples were deposited using thermal
evaporator at constant pressure. The adhesion between the film and the substrate
were observed by using peel off test. The morphology were observed using SEM
while the composition of the phase of the samples were confirmed using XRF, EDX
and XRD. It was found out that 70 nm is the minimum thickness that suitable for thin
film resistor. The quality of thin film resistors depends on Cu contents. 80/20 wt.%
CuNi was found to be the desired composition with the best electrical properties
compared to others. The same compositions was used for simulation purpose. From
the simulation it can be said that all the thin film resistor are able to perform in
frequency up to 5GHz. 80/20 wt.% CuNi able to achieved -2 dB for insertion loss and -30 dB for return loss. |
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