Characterization Of Porous Silicon And Zinc Oxide/Porous Silicon For Photodetector Application
Zinc Oxide (ZnO) is widely used for the development of optoelectronic and electronic devices such as photodetectors, piezoelectric, field-effect transistors (FET), light emitting diodes (LED), photovoltaic, chemical sensors and others, because of its capability of fast response, high optical gain...
Saved in:
Main Author: | Rosli, Nurizati |
---|---|
Format: | Thesis |
Language: | English |
Published: |
2018
|
Subjects: | |
Online Access: | http://eprints.usm.my/48010/1/Nurizati%20Rosli%20-%20CHARACTERIZATION%20OF%20POROUS%20SILICON.pdf |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Similar Items
-
Silicon Quantum Dots Derived From Zinc Oxide Incorporated Porous Silicon For Photovoltaic Applications
by: Almomani, Mohammad Samir Ali
Published: (2022) -
Growth And Characterization Of Gallium Nitride Films On Porous Silicon Substrate
by: Samsudin, Muhammad Esmed Alif
Published: (2016) -
Synthesis and characterization of laser annealed nanoporous silicon-zinc oxide nanoclusters for ultraviolet photodetector application
by: Thahe, Asad A.
Published: (2019) -
Fabrication And Characterizations Of Porous Zinc Oxide Thin Films
by: Ching, Chin Guan
Published: (2013) -
Silicon And Porous Silicon – Based Extended Gate Field Effect Transistor For pH And Cations Sensor
by: Kabaa, Emad Adnan Said
Published: (2018)