Material Design Of Iii-Nitride Ternary Via First Principles Calculations
III-nitride semiconductors exhibit an array of exceptional features, including broad coverage of spectral frequencies range and reasonable wear resistance, making them desirable materials in a variety of engineering applications. Due to these capabilities, extensive researching works have been carri...
Saved in:
Main Author: | Chang, Robin Yee Hui |
---|---|
Format: | Thesis |
Language: | English |
Published: |
2017
|
Subjects: | |
Online Access: | http://eprints.usm.my/48066/1/MATERIAL%20DESIGN%20OF%20III-NITRIDE%20TERNARY.pdf%20cut.pdf |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Similar Items
-
Infrared Dielectric Characteristics Of Porous Binary And Ternary Iii-Nitrides Heterostructures
by: Yew, Pauline
Published: (2018) -
Synthesis of gamma and theta alumina phases complemented with first principles calculation
by: Jbara, Ahmed Subhi
Published: (2017) -
Rf-Mbe Growth Of Iii-Nitrides Heterostructures For Light Detecting Applications
by: Mohd Yusoff, Mohd Zaki
Published: (2016) -
Electronic and chemical properties of cyanated, halogenated and thiophene-based linear acene derivatives by first-principles calculations
by: Musa, Auwalu
Published: (2016) -
Study of III-nitrides heterostructures grown by plasma-assisted molecular beam epitaxy (PAMBE)
by: Chin, Che Woei
Published: (2009)