Growth Of Alxga1-Xn Thin Films On Silicon Using Sol-Gel Spin Coating Technique

Group-III nitrides such as aluminum nitride (AlN) and aluminum gallium nitride (AlGaN) have potential applications for ultraviolet light emitting devices and high power devices. Nowadays, sophisticated and expensive growth techniques are used to synthesize these thin films. Thus, an alternative meth...

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Main Author:	Isa, Nurul Atikah Mohd
Format:	Thesis
Language:	English
Published:	2018
Subjects:	P87-96 Communication Mass media
Online Access:	http://eprints.usm.my/48381/1/NURUL%20ATIKAH%20MOHD%20ISA_hj.pdf
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spelling	my-usm-ep.483812021-02-22T08:34:11Z Growth Of Alxga1-Xn Thin Films On Silicon Using Sol-Gel Spin Coating Technique 2018-09 Isa, Nurul Atikah Mohd P87-96 Communication. Mass media Group-III nitrides such as aluminum nitride (AlN) and aluminum gallium nitride (AlGaN) have potential applications for ultraviolet light emitting devices and high power devices. Nowadays, sophisticated and expensive growth techniques are used to synthesize these thin films. Thus, an alternative method known as sol-gel spin coating method which is relatively cheap and simple as well as less explored was used to grow AlN and AlGaN thin films. In this work, the growth and characterization of AlN thin films on silicon (Si) substrate by sol-gel spin coating method under various nitridation parameters such as nitridation temperatures, nitridation durations, and ammonia (NH3) gas flow rates were investigated. For different nitridation temperatures, it was found that the full width at half maximum (FWHM) of AlN(002) diffraction peak of X-ray diffraction (XRD) and the E2(high) peak of Raman decreased, as the nitridation temperature increases from 1100 to 1150°C, which indicates the improvement of AlN crystal quality. The FWHM of both XRD and Raman increases when the nitridation temperature increased to 1200°C. This implied the degradation of AlN crystal. Moreover, the field-emission scanning electron microscopy (FESEM) image of sample nitridated at 1150°C showed a smooth and uniform surface with slightly bigger and densely packed grains as compared with that nitridated at 1100°C. As for nitridation durations, XRD showed the improvement of crystalline quality of AlN with increasing nitridation duration from 45 to 60 min. 2018-09 Thesis http://eprints.usm.my/48381/ http://eprints.usm.my/48381/1/NURUL%20ATIKAH%20MOHD%20ISA_hj.pdf application/pdf en public masters Universiti Sains Malaysia Institut Penyelidikan dan Teknologi Nano Optoelektronik
institution	Universiti Sains Malaysia
collection	USM Institutional Repository
language	English
topic	P87-96 Communication Mass media
spellingShingle	P87-96 Communication Mass media Isa, Nurul Atikah Mohd Growth Of Alxga1-Xn Thin Films On Silicon Using Sol-Gel Spin Coating Technique
description	Group-III nitrides such as aluminum nitride (AlN) and aluminum gallium nitride (AlGaN) have potential applications for ultraviolet light emitting devices and high power devices. Nowadays, sophisticated and expensive growth techniques are used to synthesize these thin films. Thus, an alternative method known as sol-gel spin coating method which is relatively cheap and simple as well as less explored was used to grow AlN and AlGaN thin films. In this work, the growth and characterization of AlN thin films on silicon (Si) substrate by sol-gel spin coating method under various nitridation parameters such as nitridation temperatures, nitridation durations, and ammonia (NH3) gas flow rates were investigated. For different nitridation temperatures, it was found that the full width at half maximum (FWHM) of AlN(002) diffraction peak of X-ray diffraction (XRD) and the E2(high) peak of Raman decreased, as the nitridation temperature increases from 1100 to 1150°C, which indicates the improvement of AlN crystal quality. The FWHM of both XRD and Raman increases when the nitridation temperature increased to 1200°C. This implied the degradation of AlN crystal. Moreover, the field-emission scanning electron microscopy (FESEM) image of sample nitridated at 1150°C showed a smooth and uniform surface with slightly bigger and densely packed grains as compared with that nitridated at 1100°C. As for nitridation durations, XRD showed the improvement of crystalline quality of AlN with increasing nitridation duration from 45 to 60 min.
format	Thesis
qualification_level	Master's degree
author	Isa, Nurul Atikah Mohd
author_facet	Isa, Nurul Atikah Mohd
author_sort	Isa, Nurul Atikah Mohd
title	Growth Of Alxga1-Xn Thin Films On Silicon Using Sol-Gel Spin Coating Technique
title_short	Growth Of Alxga1-Xn Thin Films On Silicon Using Sol-Gel Spin Coating Technique
title_full	Growth Of Alxga1-Xn Thin Films On Silicon Using Sol-Gel Spin Coating Technique
title_fullStr	Growth Of Alxga1-Xn Thin Films On Silicon Using Sol-Gel Spin Coating Technique
title_full_unstemmed	Growth Of Alxga1-Xn Thin Films On Silicon Using Sol-Gel Spin Coating Technique
title_sort	growth of alxga1-xn thin films on silicon using sol-gel spin coating technique
granting_institution	Universiti Sains Malaysia
granting_department	Institut Penyelidikan dan Teknologi Nano Optoelektronik
publishDate	2018
url	http://eprints.usm.my/48381/1/NURUL%20ATIKAH%20MOHD%20ISA_hj.pdf
_version_	1747821927932624896

Growth Of Alxga1-Xn Thin Films On Silicon Using Sol-Gel Spin Coating Technique

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