Electrochemical And Radio Frequency Sputtering Growth Of GaN Nanostructures On Porous Silicon
This study focuses on the growth and characterization of gallium nitride (GaN) nanostructures deposited on n-type PSi (100) substrate using electrochemical deposition (ECD) and radio frequency (RF) sputtering techniques. In the first step of this work, PSi substrates were obtained using direct curre...
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my-usm-ep.556142022-11-11T01:12:32Z Electrochemical And Radio Frequency Sputtering Growth Of GaN Nanostructures On Porous Silicon 2019-11 Shamsuddin, Siti Nur Atikah QC1 Physics (General) This study focuses on the growth and characterization of gallium nitride (GaN) nanostructures deposited on n-type PSi (100) substrate using electrochemical deposition (ECD) and radio frequency (RF) sputtering techniques. In the first step of this work, PSi substrates were obtained using direct current (DC) and pulsed current (PC) electrochemical etching techniques. The result showed that PC etching technique produced higher porosity and more uniform PSi substrate compared to than DC etching technique. In the second step, GaN layer was grown on PSi substrate by ECD technique. The quality of GaN was improved by nitridation process. Several peaks of hexagonal wurtzite (h-GaN) were observed at 32.4⁰, 34.6⁰, and 36.8⁰ which corresponding to the (010), (002), and (101) orientations, respectively 2019-11 Thesis http://eprints.usm.my/55614/ http://eprints.usm.my/55614/1/24%20Pages%20from%20Siti%20Nur%20Atikah.pdf application/pdf en public masters Universiti Sains Malaysia Pusat Pengajian Sains Fizik |
| institution |
Universiti Sains Malaysia |
| collection |
USM Institutional Repository |
| language |
English |
| topic |
QC1 Physics (General) |
| spellingShingle |
QC1 Physics (General) Shamsuddin, Siti Nur Atikah Electrochemical And Radio Frequency Sputtering Growth Of GaN Nanostructures On Porous Silicon |
| description |
This study focuses on the growth and characterization of gallium nitride (GaN) nanostructures deposited on n-type PSi (100) substrate using electrochemical deposition (ECD) and radio frequency (RF) sputtering techniques. In the first step of this work, PSi substrates were obtained using direct current (DC) and pulsed current (PC) electrochemical etching techniques. The result showed that PC etching technique produced higher porosity and more uniform PSi substrate compared to than DC etching technique. In the second step, GaN layer was grown on PSi substrate by ECD technique. The quality of GaN was improved by nitridation process. Several peaks of hexagonal wurtzite (h-GaN) were observed at 32.4⁰, 34.6⁰, and 36.8⁰ which corresponding to the (010), (002), and (101) orientations, respectively |
| format |
Thesis |
| qualification_level |
Master's degree |
| author |
Shamsuddin, Siti Nur Atikah |
| author_facet |
Shamsuddin, Siti Nur Atikah |
| author_sort |
Shamsuddin, Siti Nur Atikah |
| title |
Electrochemical And Radio Frequency Sputtering Growth Of GaN Nanostructures On Porous Silicon |
| title_short |
Electrochemical And Radio Frequency Sputtering Growth Of GaN Nanostructures On Porous Silicon |
| title_full |
Electrochemical And Radio Frequency Sputtering Growth Of GaN Nanostructures On Porous Silicon |
| title_fullStr |
Electrochemical And Radio Frequency Sputtering Growth Of GaN Nanostructures On Porous Silicon |
| title_full_unstemmed |
Electrochemical And Radio Frequency Sputtering Growth Of GaN Nanostructures On Porous Silicon |
| title_sort |
electrochemical and radio frequency sputtering growth of gan nanostructures on porous silicon |
| granting_institution |
Universiti Sains Malaysia |
| granting_department |
Pusat Pengajian Sains Fizik |
| publishDate |
2019 |
| url |
http://eprints.usm.my/55614/1/24%20Pages%20from%20Siti%20Nur%20Atikah.pdf |
| _version_ |
1776101099097292800 |