Thermal And Optical Performance Of Ingaalp-Based Low- And Gan-Based High-Power Light-Emitting Diode Packages
This study was divided into three main parts. In the first part, the performance of indium gallium aluminum phosphide (InGaAlP) low-power (LP) SMD LED affixed to substrates with different configurations. In the second part, the heat-dissipation factor, optical power, luminous flux, and spectral flux...
محفوظ في:
| المؤلف الرئيسي: | |
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| التنسيق: | أطروحة |
| اللغة: | English |
| منشور في: |
2020
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| الموضوعات: | |
| الوصول للمادة أونلاين: | http://eprints.usm.my/55618/1/Pages%20from%20Thesis-Final%20cut.pdf |
| الوسوم: |
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| الملخص: | This study was divided into three main parts. In the first part, the performance of indium gallium aluminum phosphide (InGaAlP) low-power (LP) SMD LED affixed to substrates with different configurations. In the second part, the heat-dissipation factor, optical power, luminous flux, and spectral flux of LP LEDs were estimated by extending the application of the equations that were employed for high-power (HP) LEDs. In the third part, the performance of thin film gallium nitride (ThinGaN) HP LED attached to a SinkPAD via solder was evaluated. |
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