Zno Based Extended Gate Field Effect Transistor (EGFET) Dosimeter Fabrication With Dopant Elements Of Pb, Al And Bi For X-Ray In Diagnostic Energy Range

Real time dosimetry is a major challenge in medical, industrial and education fields. One promising candidate for dosimetry is the metal oxide semiconductor fieldeffect transistor (MOSFET) dosimeter. A new design of the MOSFET dosimeter is being developed in a different study to measure the dose...

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Main Author:	Ahmed Ali, Amal Mohamed
Format:	Thesis
Language:	English
Published:	2022
Subjects:	QC1 Physics (General)
Online Access:	http://eprints.usm.my/59120/1/24%20Pages%20from%20ALMUTAIRI%20ABDULMAJEED%20MUIDH%20S%20-%20TESIS.pdf
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id	my-usm-ep.59120
record_format	uketd_dc
spelling	my-usm-ep.591202023-08-15T01:01:21Z Zno Based Extended Gate Field Effect Transistor (EGFET) Dosimeter Fabrication With Dopant Elements Of Pb, Al And Bi For X-Ray In Diagnostic Energy Range 2022-02 Ahmed Ali, Amal Mohamed QC1 Physics (General) Real time dosimetry is a major challenge in medical, industrial and education fields. One promising candidate for dosimetry is the metal oxide semiconductor fieldeffect transistor (MOSFET) dosimeter. A new design of the MOSFET dosimeter is being developed in a different study to measure the dose delivered to the tissue layers. This thesis will discuss the development of a new type of radiation detector based on the characteristics of different metal oxide materials, and a new model of radiation detector, known as extended gate field-effect transistor (EGFET) and the optimization of the operating conditions. 2022-02 Thesis http://eprints.usm.my/59120/ http://eprints.usm.my/59120/1/24%20Pages%20from%20ALMUTAIRI%20ABDULMAJEED%20MUIDH%20S%20-%20TESIS.pdf application/pdf en public phd doctoral Perpustakaan Hamzah Sendut Pusat Pengajian Sains Fizik
institution	Universiti Sains Malaysia
collection	USM Institutional Repository
language	English
topic	QC1 Physics (General)
spellingShingle	QC1 Physics (General) Ahmed Ali, Amal Mohamed Zno Based Extended Gate Field Effect Transistor (EGFET) Dosimeter Fabrication With Dopant Elements Of Pb, Al And Bi For X-Ray In Diagnostic Energy Range
description	Real time dosimetry is a major challenge in medical, industrial and education fields. One promising candidate for dosimetry is the metal oxide semiconductor fieldeffect transistor (MOSFET) dosimeter. A new design of the MOSFET dosimeter is being developed in a different study to measure the dose delivered to the tissue layers. This thesis will discuss the development of a new type of radiation detector based on the characteristics of different metal oxide materials, and a new model of radiation detector, known as extended gate field-effect transistor (EGFET) and the optimization of the operating conditions.
format	Thesis
qualification_name	Doctor of Philosophy (PhD.)
qualification_level	Doctorate
author	Ahmed Ali, Amal Mohamed
author_facet	Ahmed Ali, Amal Mohamed
author_sort	Ahmed Ali, Amal Mohamed
title	Zno Based Extended Gate Field Effect Transistor (EGFET) Dosimeter Fabrication With Dopant Elements Of Pb, Al And Bi For X-Ray In Diagnostic Energy Range
title_short	Zno Based Extended Gate Field Effect Transistor (EGFET) Dosimeter Fabrication With Dopant Elements Of Pb, Al And Bi For X-Ray In Diagnostic Energy Range
title_full	Zno Based Extended Gate Field Effect Transistor (EGFET) Dosimeter Fabrication With Dopant Elements Of Pb, Al And Bi For X-Ray In Diagnostic Energy Range
title_fullStr	Zno Based Extended Gate Field Effect Transistor (EGFET) Dosimeter Fabrication With Dopant Elements Of Pb, Al And Bi For X-Ray In Diagnostic Energy Range
title_full_unstemmed	Zno Based Extended Gate Field Effect Transistor (EGFET) Dosimeter Fabrication With Dopant Elements Of Pb, Al And Bi For X-Ray In Diagnostic Energy Range
title_sort	zno based extended gate field effect transistor (egfet) dosimeter fabrication with dopant elements of pb, al and bi for x-ray in diagnostic energy range
granting_institution	Perpustakaan Hamzah Sendut
granting_department	Pusat Pengajian Sains Fizik
publishDate	2022
url	http://eprints.usm.my/59120/1/24%20Pages%20from%20ALMUTAIRI%20ABDULMAJEED%20MUIDH%20S%20-%20TESIS.pdf
_version_	1776101250320826368

Zno Based Extended Gate Field Effect Transistor (EGFET) Dosimeter Fabrication With Dopant Elements Of Pb, Al And Bi For X-Ray In Diagnostic Energy Range

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