Zno Based Extended Gate Field Effect Transistor (EGFET) Dosimeter Fabrication With Dopant Elements Of Pb, Al And Bi For X-Ray In Diagnostic Energy Range
Real time dosimetry is a major challenge in medical, industrial and education fields. One promising candidate for dosimetry is the metal oxide semiconductor fieldeffect transistor (MOSFET) dosimeter. A new design of the MOSFET dosimeter is being developed in a different study to measure the dose...
Saved in:
Main Author: | Ahmed Ali, Amal Mohamed |
---|---|
Format: | Thesis |
Language: | English |
Published: |
2022
|
Subjects: | |
Online Access: | http://eprints.usm.my/59120/1/24%20Pages%20from%20ALMUTAIRI%20ABDULMAJEED%20MUIDH%20S%20-%20TESIS.pdf |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Similar Items
-
Dosimetric Characterization Of Optically Stimulated Luminescence Dosimeters (OSLDs) For Diagnostic X-Ray Beams/
by: Yong, Qian Ying
Published: (2014) -
Characterization of ge-doped optical fiber for use as thermoluminescent dosimeter in the diagnostic x-ray region /
by: Yap, Yuen Kiat
Published: (2007) -
Glucose sensing behavior of ZnO, CuO and their composites for extended gate field effect transistor sensor / Nur Dalila Hazirah Abd Patah
by: Abd Patah, Nur Dalila Hazirah
Published: (2017) -
The effect of various dopants on zno surface for gas sensor application
by: Alam, Farzana
Published: (2018) -
Fabrication, characterization and optimization of in-house MOSFET transistor using spin on dopant technique
by: Morsin, Marlia
Published: (2004)