Deposition And Characterisation Of Solution Processed Indium Gallium Zinc Oxide Thin Film On Silicon Substrate

This research was conducted with an objective to deposit optimum polycrystalline indium gallium zinc oxide (IGZO) on silicon (Si) substrate by using solution processed method. Specifically, sol-gel method was selected to prepare IGZO precursor solution and spin coating method was used to deposit the...

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Main Author:	Kasim, Nabihah
Format:	Thesis
Language:	English
Published:	2022
Subjects:	TK Electrical Engineering Electronics Nuclear Engineering
Online Access:	http://eprints.usm.my/59671/1/Pages%20from%20NABIHAH%20BINTI%20KASIM%20-%20TESIS%20cut.pdf
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id	my-usm-ep.59671
record_format	uketd_dc
spelling	my-usm-ep.596712023-12-13T03:25:33Z Deposition And Characterisation Of Solution Processed Indium Gallium Zinc Oxide Thin Film On Silicon Substrate 2022-09 Kasim, Nabihah TK Electrical Engineering. Electronics. Nuclear Engineering This research was conducted with an objective to deposit optimum polycrystalline indium gallium zinc oxide (IGZO) on silicon (Si) substrate by using solution processed method. Specifically, sol-gel method was selected to prepare IGZO precursor solution and spin coating method was used to deposit the film. 2022-09 Thesis http://eprints.usm.my/59671/ http://eprints.usm.my/59671/1/Pages%20from%20NABIHAH%20BINTI%20KASIM%20-%20TESIS%20cut.pdf application/pdf en public phd doctoral Universiti Sains Malaysia Institut Penyelidikan dan Teknologi Nano Optoelektrik (Institute of Nano Optoelectronics Research and Technology (INOR))
institution	Universiti Sains Malaysia
collection	USM Institutional Repository
language	English
topic	TK Electrical Engineering Electronics Nuclear Engineering
spellingShingle	TK Electrical Engineering Electronics Nuclear Engineering Kasim, Nabihah Deposition And Characterisation Of Solution Processed Indium Gallium Zinc Oxide Thin Film On Silicon Substrate
description	This research was conducted with an objective to deposit optimum polycrystalline indium gallium zinc oxide (IGZO) on silicon (Si) substrate by using solution processed method. Specifically, sol-gel method was selected to prepare IGZO precursor solution and spin coating method was used to deposit the film.
format	Thesis
qualification_name	Doctor of Philosophy (PhD.)
qualification_level	Doctorate
author	Kasim, Nabihah
author_facet	Kasim, Nabihah
author_sort	Kasim, Nabihah
title	Deposition And Characterisation Of Solution Processed Indium Gallium Zinc Oxide Thin Film On Silicon Substrate
title_short	Deposition And Characterisation Of Solution Processed Indium Gallium Zinc Oxide Thin Film On Silicon Substrate
title_full	Deposition And Characterisation Of Solution Processed Indium Gallium Zinc Oxide Thin Film On Silicon Substrate
title_fullStr	Deposition And Characterisation Of Solution Processed Indium Gallium Zinc Oxide Thin Film On Silicon Substrate
title_full_unstemmed	Deposition And Characterisation Of Solution Processed Indium Gallium Zinc Oxide Thin Film On Silicon Substrate
title_sort	deposition and characterisation of solution processed indium gallium zinc oxide thin film on silicon substrate
granting_institution	Universiti Sains Malaysia
granting_department	Institut Penyelidikan dan Teknologi Nano Optoelektrik (Institute of Nano Optoelectronics Research and Technology (INOR))
publishDate	2022
url	http://eprints.usm.my/59671/1/Pages%20from%20NABIHAH%20BINTI%20KASIM%20-%20TESIS%20cut.pdf
_version_	1794024031732629504

Deposition And Characterisation Of Solution Processed Indium Gallium Zinc Oxide Thin Film On Silicon Substrate

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