Multiband Cmos Power Amplifierwith Integrated High-Q Compact Inductor For Lora Application
In the wide development of the Internet of Things (IoT), Machine-to-Machine (M2M), and biomedical applications in research and standardization, the spectrum of sub-GHz has received fresh attention. Long-range (LoRa) devices use the sub-GHz frequency bands to operate. The size of the chip becomes big...
محفوظ في:
| المؤلف الرئيسي: | |
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| التنسيق: | أطروحة |
| اللغة: | English |
| منشور في: |
2023
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| الموضوعات: | |
| الوصول للمادة أونلاين: | http://eprints.usm.my/60509/1/Pages%20from%20ARVIND%20SINGH%20RAWAT%20-%20TESIS.pdf |
| الوسوم: |
إضافة وسم
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| الملخص: | In the wide development of the Internet of Things (IoT), Machine-to-Machine (M2M), and biomedical applications in research and standardization, the spectrum of sub-GHz has received fresh attention. Long-range (LoRa) devices use the sub-GHz frequency bands to operate. The size of the chip becomes bigger when designed to target low frequencies and it is mainly contributed by the inductors. In this research,
a high-performance CMOS power amplifier (PA) with a novel custom shape, high Qfactor compact inductor (HQCI) is fabricated in 130 nm, 6-metal layers CMOS process. |
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