Multiband Cmos Power Amplifierwith Integrated High-Q Compact Inductor For Lora Application

In the wide development of the Internet of Things (IoT), Machine-to-Machine (M2M), and biomedical applications in research and standardization, the spectrum of sub-GHz has received fresh attention. Long-range (LoRa) devices use the sub-GHz frequency bands to operate. The size of the chip becomes big...

وصف كامل

محفوظ في:
التفاصيل البيبلوغرافية
المؤلف الرئيسي: Rawat, Arvind Singh
التنسيق: أطروحة
اللغة:English
منشور في: 2023
الموضوعات:
الوصول للمادة أونلاين:http://eprints.usm.my/60509/1/Pages%20from%20ARVIND%20SINGH%20RAWAT%20-%20TESIS.pdf
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الوصف
الملخص:In the wide development of the Internet of Things (IoT), Machine-to-Machine (M2M), and biomedical applications in research and standardization, the spectrum of sub-GHz has received fresh attention. Long-range (LoRa) devices use the sub-GHz frequency bands to operate. The size of the chip becomes bigger when designed to target low frequencies and it is mainly contributed by the inductors. In this research, a high-performance CMOS power amplifier (PA) with a novel custom shape, high Qfactor compact inductor (HQCI) is fabricated in 130 nm, 6-metal layers CMOS process.