Multiband Cmos Power Amplifierwith Integrated High-Q Compact Inductor For Lora Application
In the wide development of the Internet of Things (IoT), Machine-to-Machine (M2M), and biomedical applications in research and standardization, the spectrum of sub-GHz has received fresh attention. Long-range (LoRa) devices use the sub-GHz frequency bands to operate. The size of the chip becomes big...
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2023
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my-usm-ep.605092024-05-02T08:37:33Z Multiband Cmos Power Amplifierwith Integrated High-Q Compact Inductor For Lora Application 2023-05 Rawat, Arvind Singh TK7800-8360 Electronics In the wide development of the Internet of Things (IoT), Machine-to-Machine (M2M), and biomedical applications in research and standardization, the spectrum of sub-GHz has received fresh attention. Long-range (LoRa) devices use the sub-GHz frequency bands to operate. The size of the chip becomes bigger when designed to target low frequencies and it is mainly contributed by the inductors. In this research, a high-performance CMOS power amplifier (PA) with a novel custom shape, high Qfactor compact inductor (HQCI) is fabricated in 130 nm, 6-metal layers CMOS process. 2023-05 Thesis http://eprints.usm.my/60509/ http://eprints.usm.my/60509/1/Pages%20from%20ARVIND%20SINGH%20RAWAT%20-%20TESIS.pdf application/pdf en public phd doctoral Universiti Sains Malaysia Pusat Usahasama Kecemerlangan Rekabentuk Mikroelektronik (Collaborative Microelectronic Design Excellence Centre (CEDEC)) |
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Universiti Sains Malaysia |
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English |
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TK7800-8360 Electronics |
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TK7800-8360 Electronics Rawat, Arvind Singh Multiband Cmos Power Amplifierwith Integrated High-Q Compact Inductor For Lora Application |
description |
In the wide development of the Internet of Things (IoT), Machine-to-Machine (M2M), and biomedical applications in research and standardization, the spectrum of sub-GHz has received fresh attention. Long-range (LoRa) devices use the sub-GHz frequency bands to operate. The size of the chip becomes bigger when designed to target low frequencies and it is mainly contributed by the inductors. In this research,
a high-performance CMOS power amplifier (PA) with a novel custom shape, high Qfactor compact inductor (HQCI) is fabricated in 130 nm, 6-metal layers CMOS process. |
format |
Thesis |
qualification_name |
Doctor of Philosophy (PhD.) |
qualification_level |
Doctorate |
author |
Rawat, Arvind Singh |
author_facet |
Rawat, Arvind Singh |
author_sort |
Rawat, Arvind Singh |
title |
Multiband Cmos Power Amplifierwith Integrated High-Q Compact Inductor For Lora Application |
title_short |
Multiband Cmos Power Amplifierwith Integrated High-Q Compact Inductor For Lora Application |
title_full |
Multiband Cmos Power Amplifierwith Integrated High-Q Compact Inductor For Lora Application |
title_fullStr |
Multiband Cmos Power Amplifierwith Integrated High-Q Compact Inductor For Lora Application |
title_full_unstemmed |
Multiband Cmos Power Amplifierwith Integrated High-Q Compact Inductor For Lora Application |
title_sort |
multiband cmos power amplifierwith integrated high-q compact inductor for lora application |
granting_institution |
Universiti Sains Malaysia |
granting_department |
Pusat Usahasama Kecemerlangan Rekabentuk Mikroelektronik (Collaborative Microelectronic Design Excellence Centre (CEDEC)) |
publishDate |
2023 |
url |
http://eprints.usm.my/60509/1/Pages%20from%20ARVIND%20SINGH%20RAWAT%20-%20TESIS.pdf |
_version_ |
1804888952124997632 |