Multiband Cmos Power Amplifierwith Integrated High-Q Compact Inductor For Lora Application

In the wide development of the Internet of Things (IoT), Machine-to-Machine (M2M), and biomedical applications in research and standardization, the spectrum of sub-GHz has received fresh attention. Long-range (LoRa) devices use the sub-GHz frequency bands to operate. The size of the chip becomes big...

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主要作者: Rawat, Arvind Singh
格式: Thesis
语言:English
出版: 2023
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spelling my-usm-ep.605092024-05-02T08:37:33Z Multiband Cmos Power Amplifierwith Integrated High-Q Compact Inductor For Lora Application 2023-05 Rawat, Arvind Singh TK7800-8360 Electronics In the wide development of the Internet of Things (IoT), Machine-to-Machine (M2M), and biomedical applications in research and standardization, the spectrum of sub-GHz has received fresh attention. Long-range (LoRa) devices use the sub-GHz frequency bands to operate. The size of the chip becomes bigger when designed to target low frequencies and it is mainly contributed by the inductors. In this research, a high-performance CMOS power amplifier (PA) with a novel custom shape, high Qfactor compact inductor (HQCI) is fabricated in 130 nm, 6-metal layers CMOS process. 2023-05 Thesis http://eprints.usm.my/60509/ http://eprints.usm.my/60509/1/Pages%20from%20ARVIND%20SINGH%20RAWAT%20-%20TESIS.pdf application/pdf en public phd doctoral Universiti Sains Malaysia Pusat Usahasama Kecemerlangan Rekabentuk Mikroelektronik (Collaborative Microelectronic Design Excellence Centre (CEDEC))
institution Universiti Sains Malaysia
collection USM Institutional Repository
language English
topic TK7800-8360 Electronics
spellingShingle TK7800-8360 Electronics
Rawat, Arvind Singh
Multiband Cmos Power Amplifierwith Integrated High-Q Compact Inductor For Lora Application
description In the wide development of the Internet of Things (IoT), Machine-to-Machine (M2M), and biomedical applications in research and standardization, the spectrum of sub-GHz has received fresh attention. Long-range (LoRa) devices use the sub-GHz frequency bands to operate. The size of the chip becomes bigger when designed to target low frequencies and it is mainly contributed by the inductors. In this research, a high-performance CMOS power amplifier (PA) with a novel custom shape, high Qfactor compact inductor (HQCI) is fabricated in 130 nm, 6-metal layers CMOS process.
format Thesis
qualification_name Doctor of Philosophy (PhD.)
qualification_level Doctorate
author Rawat, Arvind Singh
author_facet Rawat, Arvind Singh
author_sort Rawat, Arvind Singh
title Multiband Cmos Power Amplifierwith Integrated High-Q Compact Inductor For Lora Application
title_short Multiband Cmos Power Amplifierwith Integrated High-Q Compact Inductor For Lora Application
title_full Multiband Cmos Power Amplifierwith Integrated High-Q Compact Inductor For Lora Application
title_fullStr Multiband Cmos Power Amplifierwith Integrated High-Q Compact Inductor For Lora Application
title_full_unstemmed Multiband Cmos Power Amplifierwith Integrated High-Q Compact Inductor For Lora Application
title_sort multiband cmos power amplifierwith integrated high-q compact inductor for lora application
granting_institution Universiti Sains Malaysia
granting_department Pusat Usahasama Kecemerlangan Rekabentuk Mikroelektronik (Collaborative Microelectronic Design Excellence Centre (CEDEC))
publishDate 2023
url http://eprints.usm.my/60509/1/Pages%20from%20ARVIND%20SINGH%20RAWAT%20-%20TESIS.pdf
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